

Infineon Technologies
IRF3315SPBF
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
IRF3315SPBF Description
IRF3315SPBF Description
The IRF3315SPBF from Infineon Technologies is a high-performance N-channel HEXFET® MOSFET designed for power management applications. With a 150V drain-to-source voltage (Vdss) and continuous drain current (Id) of 21A (Tc), this device offers robust performance in demanding environments. It features a low on-resistance (Rds(on)) of 82mOhm @ 12A, 10V, ensuring efficient power handling with minimal losses. Packaged in a D2PAK (TO-263) surface-mount form factor, it is optimized for high-power density designs. The MOSFET is RoHS3 compliant and REACH unaffected, meeting stringent environmental standards.
IRF3315SPBF Features
- Low Gate Charge (Qg): 95nC @ 10V reduces switching losses, enhancing efficiency in high-frequency applications.
- High Voltage Tolerance: Vdss of 150V and Vgs(max) of ±20V ensure reliability in high-voltage circuits.
- Thermal Performance: Power dissipation up to 94W (Tc) and 3.8W (Ta) for effective heat management.
- Fast Switching: Low input capacitance (Ciss) of 1300pF @ 25V minimizes delay times.
- Robust Construction: HEXFET® technology delivers superior current handling and durability.
- Wide Drive Voltage Range: 10V drive voltage simplifies gate driver compatibility.
IRF3315SPBF Applications
- Switching Power Supplies: Ideal for DC-DC converters and SMPS due to low Rds(on) and high efficiency.
- Motor Control: Suitable for H-bridge motor drivers in industrial and automotive systems.
- LED Lighting: Efficiently drives high-power LED arrays in lighting ballasts.
- Battery Management: Used in battery protection circuits and charge controllers for its high current capability.
- Industrial Automation: Deployed in PLC power stages and solenoid drivers for reliable performance.
Conclusion of IRF3315SPBF
The IRF3315SPBF stands out as a high-efficiency, high-voltage MOSFET with low conduction losses and excellent thermal characteristics. Its D2PAK package and Infineon’s HEXFET® technology make it a top choice for power electronics designers seeking reliability in switching, motor control, and energy-efficient systems. With RoHS3 compliance and industrial-grade robustness, it is well-suited for modern, high-performance applications.



.png)











.png?x-oss-process=image/format,webp/resize,h_32)










