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IRF3415S

IRF3415S Description

The IRF3415S from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 150V drain-to-source voltage (Vdss) and 43A continuous drain current (Id), it delivers robust performance in power management circuits. The device features a low on-resistance (Rds(on)) of 42mΩ at 10V gate drive, minimizing conduction losses. Packaged in a D2PAK (TO-263) surface-mount format, it offers excellent thermal dissipation with a maximum power rating of 200W (Tc). Though marked as obsolete, its reliability and performance make it suitable for legacy designs.

IRF3415S Features

• Low Rds(on): 42mΩ @ 22A, 10V ensures efficient power handling.
• High Current Capability: 43A (Tc) continuous drain current supports high-load applications.
• Fast Switching: Gate charge (Qg) of 200nC @ 10V and input capacitance (Ciss) of 2400pF @ 25V enable rapid switching.
• Robust Construction: ±20V gate-source voltage (Vgs) tolerance enhances durability.
• Thermal Efficiency: D2PAK package with 200W (Tc) power dissipation ensures heat management.
• Compliance: REACH unaffected, MSL 1 (unlimited shelf life), and EAR99/ECCN certified.

IRF3415S Applications

• Power Supplies: Ideal for DC-DC converters, SMPS, and voltage regulation due to low Rds(on).
• Motor Control: Suitable for H-bridge drivers and brushless DC motor controllers.
• Automotive Systems: Used in electronic ignition, load switches, and battery management.
• Industrial Equipment: Efficient in inverters, UPS systems, and high-current switching modules.
• Legacy Designs: A reliable choice for existing systems requiring high-voltage, high-current MOSFETs.

Conclusion of IRF3415S

The IRF3415S remains a high-performance MOSFET despite its obsolete status, offering low conduction losses, high current capacity, and thermal resilience. Its D2PAK package and Infineon’s HEXFET® technology make it a dependable choice for power electronics, industrial systems, and automotive applications. Engineers seeking a proven solution for high-efficiency switching will find this MOSFET a viable option, though newer alternatives should be evaluated for forward-looking designs.