Infineon Technologies_IRF3708PBF
original

Infineon Technologies
IRF3708PBF

278-IRF3708PBF
PDF Datasheet
MOSFET N-CH 30V 62A TO220AB

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2417 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 4.5 V
Product Status
Obsolete
Supplier Device Package
TO-220AB
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
87W (Tc)
Package / Case
TO-220-3
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IRF3708PBF Description

IRF3708PBF Description

The IRF3708PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high power and efficiency. With a drain to source voltage (Vdss) of 30 V and a continuous drain current (Id) of 62 A at 25°C, this device is capable of handling demanding power electronic applications. The IRF3708PBF features a low on-resistance (Rds On) of 12 mOhm at 15 A and 10 V, ensuring minimal power dissipation and high efficiency. The device is packaged in a TO220AB through-hole package, making it suitable for a wide range of applications.

IRF3708PBF Features

  • N-Channel MOSFET with 30 V drain to source voltage (Vdss)
  • 62 A continuous drain current (Id) at 25°C
  • Low on-resistance (Rds On) of 12 mOhm at 15 A and 10 V
  • High input capacitance (Ciss) of 2417 pF at 15 V
  • Low gate charge (Qg) of 24 nC at 4.5 V
  • Wide gate-source voltage range (Vgs) of ±12 V
  • RoHS3 compliant, making it suitable for environmentally friendly applications
  • REACH unaffected, ensuring compliance with European chemical regulations
  • Moisture sensitivity level (MSL) of 1, allowing for unlimited storage
  • Through-hole mounting type for easy integration into various designs

IRF3708PBF Applications

The IRF3708PBF is ideal for a variety of high-power applications, including:

  1. Power switching and control in industrial and automotive systems
  2. Motor control and drive circuits for electric vehicles and robotics
  3. Power supply and converter designs for renewable energy systems
  4. High-efficiency power amplifiers for audio and communication equipment
  5. Battery management systems for portable electronics and energy storage

Conclusion of IRF3708PBF

The IRF3708PBF is a powerful and efficient N-Channel MOSFET from Infineon Technologies, offering high performance and reliability for demanding power electronic applications. Its unique combination of low on-resistance, high input capacitance, and wide gate-source voltage range make it an ideal choice for applications requiring high power and efficiency. Despite being classified as obsolete, the IRF3708PBF remains a popular choice for engineers looking for a reliable and cost-effective solution in high-power applications.

FAQ

Are there related or alternative parts for IRF3708PBF?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is the mounting type of IRF3708PBF?
What voltage specification is listed for IRF3708PBF?
What operating temperature range does IRF3708PBF support?
What package or case is IRF3708PBF available in?
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