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IRF3808PBF

IRF3808PBF Description

The IRF3808PBF is a high-performance N-Channel MOSFET (Metal Oxide) from Infineon Technologies, designed to deliver exceptional performance in a variety of applications. With a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 140A at 25°C, this device is well-suited for high-power applications. The IRF3808PBF features a low on-resistance (Rds On) of 7mOhm at 82A and 10V, ensuring efficient power dissipation and minimal power loss. The device is mounted through-hole and is packaged in a tube, making it easy to integrate into various designs.

IRF3808PBF Features

• Low On-Resistance (Rds On): 7mOhm at 82A and 10V, ensuring efficient power dissipation and minimal power loss.
• High Drain-to-Source Voltage (Vdss): 75V, suitable for high-voltage applications.
• High Continuous Drain Current (Id): 140A at 25°C, capable of handling high power loads.
• Low Gate Charge (Qg): 220nC at 10V, reducing switching losses and improving efficiency.
• Low Input Capacitance (Ciss): 5310pF at 25V, minimizing capacitive effects and improving high-frequency performance.
• Robust Thermal Performance: With a maximum power dissipation of 330W (Tc), the IRF3808PBF can handle high-temperature environments.
• Compliance with Industry Standards: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.

IRF3808PBF Applications

The IRF3808PBF is ideal for various high-power applications, including:

1. Power Supplies: Due to its high voltage and current ratings, the IRF3808PBF is well-suited for power supply designs, particularly in industrial and automotive applications.
2. Motor Controls: The device's low on-resistance and high current capabilities make it an excellent choice for motor control applications, such as electric vehicles and industrial motor drives.
3. Industrial Automation: The IRF3808PBF's robust performance and thermal characteristics make it suitable for use in industrial automation systems, where high power and reliability are critical.
4. Renewable Energy Systems: The device's ability to handle high power and voltage makes it an ideal choice for solar inverters and other renewable energy applications.

Conclusion of IRF3808PBF

The IRF3808PBF from Infineon Technologies is a powerful and versatile N-Channel MOSFET, offering a combination of high voltage, current, and low on-resistance that makes it ideal for a wide range of high-power applications. Its low gate charge and input capacitance further enhance its performance, making it a preferred choice for demanding applications in power supplies, motor controls, industrial automation, and renewable energy systems. With its compliance with industry standards and robust thermal performance, the IRF3808PBF is a reliable and efficient solution for designers looking to optimize their high-power electronic systems.