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IRF3808SPBF

IRF3808SPBF Description

The IRF3808SPBF from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. With a 75V drain-to-source voltage (Vdss) and continuous drain current (Id) of 106A (at Tc=25°C), this HEXFET® series MOSFET delivers robust power handling in a compact D2PAK (TO-263) surface-mount package. Its ultra-low on-resistance (Rds(on)) of 7mOhm at 82A, 10V ensures minimal conduction losses, making it highly efficient for high-current switching. The device operates with a gate drive voltage of 10V and features a maximum gate charge (Qg) of 220nC, enabling fast switching speeds. Compliant with ROHS3 and REACH standards, it is suitable for environmentally conscious designs.

IRF3808SPBF Features

• Low Rds(on): 7mOhm @ 82A, 10V reduces power dissipation and improves efficiency.
• High Current Capability: 106A continuous drain current for heavy-load applications.
• Fast Switching: Optimized gate charge (Qg = 220nC) and input capacitance (Ciss = 5310pF) enhance switching performance.
• Robust Construction: D2PAK package offers superior thermal management (200W max power dissipation).
• Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexibility in drive circuits.
• Reliable Technology: Infineon’s HEXFET® MOSFET technology ensures durability and consistent performance.

IRF3808SPBF Applications

This MOSFET is ideal for:

• Switching Power Supplies: High-efficiency DC-DC converters and SMPS designs.
• Motor Drives: High-current H-bridge and PWM motor control systems.
• Automotive Systems: Electric vehicle (EV) power distribution, battery management, and LED drivers.
• Industrial Equipment: Inverters, welding machines, and uninterruptible power supplies (UPS).
• Renewable Energy: Solar inverters and charge controllers requiring low-loss switching.

Conclusion of IRF3808SPBF

The IRF3808SPBF stands out for its high current capacity, low Rds(on), and rugged D2PAK package, making it a top choice for power electronics engineers. Its fast switching and thermal efficiency are critical for applications demanding reliability under high stress. Whether in automotive, industrial, or renewable energy systems, this MOSFET provides a balance of performance, durability, and compliance with modern environmental standards.