Infineon Technologies_IRF5210LPBF
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Infineon Technologies
IRF5210LPBF

278-IRF5210LPBF
PDF Datasheet
MOSFET P-CH 100V 38A TO262

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Tech Specifications

FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
TO-262
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
3.1W (Ta), 170W (Tc)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
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IRF5210LPBF Description

IRF5210LPBF Description

The IRF5210LPBF from Infineon Technologies is a high-performance P-channel HEXFET® power MOSFET designed for demanding switching applications. With a 100V drain-to-source voltage (Vdss) and continuous drain current (Id) of 38A (Tc), this device delivers robust power handling in a compact TO-262 package. It features a low on-resistance (Rds(on)) of 60mΩ at 10V gate drive, ensuring efficient power conversion and minimal heat generation. The MOSFET is optimized for high-speed switching with a gate charge (Qg) of 230nC @ 10V and input capacitance (Ciss) of 2780pF @ 25V, making it suitable for high-frequency applications.

IRF5210LPBF Features

  • High Voltage & Current Rating: 100V Vdss and 38A Id (Tc) for robust performance in power circuits.
  • Low Rds(on): 60mΩ @ 10V reduces conduction losses, improving efficiency.
  • Optimized Switching Performance: Low gate charge (230nC) and moderate input capacitance (2780pF) enable fast switching.
  • Wide Gate-Source Voltage Range: ±20V Vgs(max) for flexible drive compatibility.
  • Thermal Efficiency: Power dissipation up to 170W (Tc) with proper heatsinking.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

IRF5210LPBF Applications

This MOSFET is ideal for:

  • DC-DC Converters: Efficient power conversion in industrial and automotive systems.
  • Motor Control: High-current switching in brushed/brushless motor drives.
  • Power Supplies: Low-loss switching in SMPS and UPS designs.
  • Battery Management: Reverse polarity protection and load switching in energy storage systems.
  • Industrial Automation: Reliable performance in high-power switching applications.

Conclusion of IRF5210LPBF

The IRF5210LPBF stands out as a high-efficiency, high-reliability P-channel MOSFET, offering low Rds(on), fast switching, and robust thermal performance. While marked as obsolete, its proven HEXFET® technology ensures dependable operation in power electronics. Engineers seeking a cost-effective, high-performance solution for motor drives, converters, or power management will find this MOSFET a compelling choice. Its balance of voltage handling, current capacity, and switching speed makes it a versatile component for industrial and automotive applications.

FAQ

What is the mounting type of IRF5210LPBF?
IRF5210LPBF uses a Through Hole mounting style based on the listed product specifications.
What is IRF5210LPBF?
Are there related or alternative parts for IRF5210LPBF?
What operating temperature range does IRF5210LPBF support?
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