Infineon Technologies_IRF530NPBF
original

Infineon Technologies
IRF530NPBF

278-IRF530NPBF
PDF Datasheet
MOSFET N-CH 100V 17A TO220AB
10 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
35
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Typical Rise Time (ns)
22
PPAP
No
Channel Mode
Enhancement
Show More

IRF530NPBF Description

IRF530NPBF Description

The IRF530NPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for a wide range of applications requiring efficient power switching and control. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 17A at 25°C, this device delivers robust performance in demanding environments. Key features include low on-resistance (Rds On) of 90mOhm at 9A and 10V, and a maximum gate-source voltage (Vgs) of ±20V. The IRF530NPBF is housed in a TO220AB package, suitable for through-hole mounting.

IRF530NPBF Features

  • Low On-Resistance (Rds On): The IRF530NPBF boasts a low on-resistance of 90mOhm at 9A and 10V, ensuring minimal power loss and high efficiency in power switching applications.
  • High Drain-to-Source Voltage (Vdss): With a Vdss of 100V, this MOSFET can handle high voltage applications, making it suitable for various power electronics and industrial systems.
  • Robust Current Handling: The IRF530NPBF can handle a continuous drain current of 17A at 25°C, making it ideal for applications requiring high current switching.
  • Wide Gate-Source Voltage Range: The maximum gate-source voltage (Vgs) of ±20V allows for flexible control and compatibility with various gate drive circuits.
  • Low Gate Charge (Qg): The IRF530NPBF has a low gate charge of 37nC at 10V, enabling fast switching and reduced switching losses.

IRF530NPBF Applications

The IRF530NPBF is well-suited for a variety of applications where high efficiency, low power loss, and robust performance are critical:

  1. Power Supplies: Ideal for use in power supply designs, including switching power supplies and power factor correction circuits.
  2. Motor Control: Suitable for motor control applications, such as brushless DC motors and stepper motors, where high current and voltage handling are required.
  3. Industrial Automation: The IRF530NPBF can be used in industrial automation systems, such as servo drives and robotic control systems, where high reliability and performance are essential.
  4. Renewable Energy: This MOSFET is suitable for use in renewable energy applications, such as solar inverters and wind power systems, where high efficiency and robust performance are crucial.

Conclusion of IRF530NPBF

The IRF530NPBF from Infineon Technologies is a high-performance N-Channel MOSFET that offers a combination of low on-resistance, high voltage and current handling capabilities, and fast switching. Its unique features, such as low gate charge and wide gate-source voltage range, make it an ideal choice for a wide range of applications, including power supplies, motor control, industrial automation, and renewable energy systems. With its robust performance and reliable operation, the IRF530NPBF is a valuable addition to any design engineer's toolkit.

FAQ

What package or case is IRF530NPBF available in?
IRF530NPBF is available in the TO-220-3 package / case.
What is the mounting type of IRF530NPBF?
What is IRF530NPBF?
What operating temperature range does IRF530NPBF support?
What voltage specification is listed for IRF530NPBF?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ