Infineon Technologies_IRF530NS
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Infineon Technologies
IRF530NS

278-IRF530NS
PDF Datasheet
MOSFET N-CH 100V 17A D2PAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
D2PAK
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
3.8W (Ta), 70W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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IRF530NS Description

IRF530NS Description

The IRF530NS is a high-performance N-Channel MOSFET developed by Infineon Technologies. It features a D2PAK package and is part of the HEXFET® series. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 17A at 25°C, the IRF530NS is well-suited for various power electronics applications.

IRF530NS Features

  • High Input Capacitance (Ciss): The IRF530NS boasts an impressive maximum input capacitance of 920 pF at 25V, ensuring fast switching speeds and improved performance in high-frequency applications.
  • Low Gate Charge (Qg): With a maximum gate charge of 37 nC at 10V, the IRF530NS reduces switching losses and improves efficiency in power management circuits.
  • Low Rds On: The IRF530NS achieves a maximum Rds On of 90 mΩ at 9A and 10V, contributing to lower conduction losses and higher efficiency in power conversion systems.
  • High Vgs(th): The IRF530NS has a maximum threshold voltage (Vgs(th)) of 4V at 250µA, ensuring reliable operation and easy drive in various electronic devices.
  • Robust Power Dissipation: The IRF530NS can handle a maximum power dissipation of 3.8W at ambient temperature (Ta) and 70W at case temperature (Tc), making it suitable for high-power applications.
  • Surface Mount Technology: The IRF530NS is designed for surface mount applications, providing a compact and reliable solution for space-constrained designs.

IRF530NS Applications

The IRF530NS is ideal for a wide range of applications, including:

  1. Power Management: Its high input capacitance and low gate charge make it suitable for high-frequency power management circuits, such as DC-DC converters and power supplies.
  2. Motor Control: The IRF530NS's low Rds On and high Vdss make it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
  3. Industrial Automation: Its robust power dissipation and high drain current capabilities make it suitable for industrial automation systems, such as robotic arms and conveyor belts.
  4. Automotive Electronics: The IRF530NS can be used in various automotive applications, including electric power steering, window lift systems, and battery management systems.

Conclusion of IRF530NS

The IRF530NS is a versatile and high-performance N-Channel MOSFET that offers excellent technical specifications and performance benefits. Its unique features, such as high input capacitance, low gate charge, and low Rds On, make it an ideal choice for various power electronics applications. Despite being classified as obsolete, the IRF530NS remains a popular choice for engineers and designers due to its proven reliability and performance in demanding applications.

FAQ

What voltage specification is listed for IRF530NS?
The listed voltage-related specification for IRF530NS is 100 V.
What is the mounting type of IRF530NS?
Are there related or alternative parts for IRF530NS?
What operating temperature range does IRF530NS support?
What is IRF530NS?
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