Infineon Technologies_IRF530NSPBF
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Infineon Technologies
IRF530NSPBF

278-IRF530NSPBF
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MOSFET N-CH 100V 17A D2PAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
D2PAK
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
3.8W (Ta), 70W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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IRF530NSPBF Description

IRF530NSPBF Description

The IRF530NSPBF from Infineon Technologies is an N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 100V drain-to-source voltage (Vdss) and 17A continuous drain current (Id), it delivers robust performance in demanding circuits. The device features a low on-resistance (Rds(on)) of 90mΩ at 10V gate drive, minimizing conduction losses. Packaged in a D2PAK (TO-263) surface-mount format, it combines high power handling (70W at Tc) with compact mounting suitability. Its ±20V gate-source voltage (Vgs) tolerance and 4V threshold (Vgs(th)) ensure compatibility with standard drive circuits.

IRF530NSPBF Features

  • Low Gate Charge (Qg): 37nC at 10V reduces switching losses, enhancing efficiency in high-frequency applications.
  • Optimized Input Capacitance (Ciss): 920pF at 25V balances switching speed and gate drive requirements.
  • High Power Dissipation: 70W (Tc) enables reliable operation under thermal stress.
  • Robust Construction: ROHS3 compliant and REACH unaffected, meeting environmental standards.
  • Wide Drive Voltage Range: 10V drive voltage ensures full enhancement with minimal gate power.

IRF530NSPBF Applications

Ideal for:

  • DC-DC Converters: Low Rds(on) and Qg improve efficiency in buck/boost topologies.
  • Motor Control: High current handling suits H-bridge and PWM-driven motor drives.
  • Power Supplies: Used in SMPS designs for industrial and automotive systems.
  • Load Switching: Reliable performance in hot-swap and OR-ing applications.

Conclusion of IRF530NSPBF

The IRF530NSPBF stands out for its balance of voltage rating, current capacity, and switching efficiency, making it a versatile choice for power electronics. Its D2PAK package offers thermal and mounting advantages over TO-220 alternatives, while Infineon’s HEXFET® technology ensures durability. Engineers will appreciate its low-loss characteristics in high-frequency designs and its compliance with global environmental standards. A dependable solution for medium-power switching needs.

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