Infineon Technologies
IRF530NSTRLPBF

278-IRF530NSTRLPBF
PDF Datasheet
MOSFET N-CH 100V 17A D2PAK
10 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
35
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Typical Rise Time (ns)
22
PPAP
No
Channel Mode
Enhancement
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IRF530NSTRLPBF Description

IRF530NSTRLPBF Description

The IRF530NSTRLPBF is a high-performance N-channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching capabilities. With a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 17A at 25°C, this device is well-suited for a variety of power electronic applications.

IRF530NSTRLPBF Features

  • High Input Capacitance (Ciss): The IRF530NSTRLPBF boasts an impressive maximum input capacitance of 920 pF at 25V, ensuring fast switching speeds and improved performance in high-frequency applications.
  • Low Gate Charge (Qg): With a maximum gate charge of 37 nC at 10V, this MOSFET minimizes power losses during switching, contributing to higher efficiency and reduced heat generation.
  • Robust Power Dissipation: The IRF530NSTRLPBF can handle a maximum power dissipation of 3.8W at ambient temperature (Ta) and 70W at case temperature (Tc), making it suitable for high-power applications.
  • Low Rds On: Featuring a maximum Rds On of 90mOhm at 9A and 10V, this MOSFET offers low on-resistance for minimal power loss and improved efficiency.
  • Wide Vgs Range: The IRF530NSTRLPBF operates with a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in gate drive requirements.
  • Compliance with Industry Standards: This device is REACH unaffected, RoHS3 compliant, and moisture sensitivity level (MSL) 1, ensuring compliance with environmental and industry standards.

IRF530NSTRLPBF Applications

The IRF530NSTRLPBF is ideal for a range of applications, including:

  • Power Supplies: Due to its high voltage and current ratings, this MOSFET is well-suited for power supply designs, particularly in applications requiring efficient power conversion and low power loss.
  • Motor Control: The IRF530NSTRLPBF's low on-resistance and high current capabilities make it an excellent choice for motor control applications, where precise control and high efficiency are critical.
  • Industrial Automation: In industrial automation systems, this MOSFET can be used for driving high-power loads and providing reliable switching in demanding environments.

Conclusion of IRF530NSTRLPBF

The IRF530NSTRLPBF from Infineon Technologies is a powerful, efficient, and reliable N-channel MOSFET designed for high-power applications. Its unique combination of high input capacitance, low gate charge, and robust power dissipation capabilities make it an excellent choice for power supplies, motor control, and industrial automation applications. With its compliance with industry standards and wide Vgs range, the IRF530NSTRLPBF offers a versatile solution for demanding power electronic designs.

FAQ

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IRF530NSTRLPBF uses a Surface Mount mounting style based on the listed product specifications.
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