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Infineon Technologies
IRF5N5210
285-IRF5N5210
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
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Tech Specifications
Max Junction Temperature (Tj)
150 °C
Min Operating Temperature
-55 °C
Drain to Source Breakdown Voltage
-100 V
On-State Resistance
100 mΩ
Gate to Source Voltage (Vgs)
20 V
Mount
Surface Mount
Termination
SMD/SMT
Turn-On Delay Time
28 ns
IRF5N5210 Description
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
FAQ
What is IRF5N5210?
IRF5N5210 is a RF FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
Are there related or alternative parts for IRF5N5210?
Is IRF5N5210 currently in stock?
What operating temperature range does IRF5N5210 support?
What is the mounting type of IRF5N5210?
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