Infineon Technologies_IRF60R217
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Infineon Technologies
IRF60R217

278-IRF60R217
PDF Datasheet
MOSFET N-CH 60V 58A DPAK
12 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
21
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 10 V
Typical Rise Time (ns)
29
PPAP
No
Channel Mode
Enhancement
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IRF60R217 Description

IRF60R217 Description

The IRF60R217 is a high-performance MOSFET (Metal Oxide) from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. This N-Channel device offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 58A at 25°C, making it suitable for a wide range of power electronics applications.

IRF60R217 Features

  • Low On-Resistance: The IRF60R217 boasts a maximum on-resistance (Rds On) of 9.9mOhm at 35A and 10V, ensuring minimal power loss during operation.
  • High Input Capacitance: With a maximum input capacitance (Ciss) of 2170 pF at 25V, this MOSFET provides fast switching capabilities.
  • Low Gate Charge: The maximum gate charge (Qg) is 66 nC at 10V, enabling efficient gate drive and reduced power consumption.
  • Robust Voltage Ratings: The device can handle a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 3.7V at 50µA.
  • Power Dissipation: The IRF60R217 can dissipate up to 83W of power at the case temperature (Tc), making it suitable for high-power applications.
  • Mounting Type: This MOSFET is surface-mount, allowing for compact and efficient PCB layouts.
  • Compliance: The IRF60R217 is compliant with RoHS3 and REACH standards, ensuring environmental and health safety.

IRF60R217 Applications

The IRF60R217 is ideal for various applications where high power handling, low on-resistance, and fast switching are required. Some specific use cases include:

  1. Power Supplies: The device's high voltage and current ratings make it suitable for power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
  2. Motor Control: The IRF60R217 can be used in motor control applications, such as electric vehicles, industrial automation, and robotics, where high efficiency and fast switching are crucial.
  3. Inverters: This MOSFET is suitable for inverter applications, such as solar inverters and uninterruptible power supplies (UPS), where high power and voltage ratings are necessary.

Conclusion of IRF60R217

The IRF60R217 from Infineon Technologies is a powerful and efficient MOSFET designed for high-power applications. Its low on-resistance, high input capacitance, and robust voltage ratings make it an ideal choice for power supplies, motor control, and inverter applications. With its compliance with RoHS3 and REACH standards, the IRF60R217 is not only a high-performance device but also an environmentally friendly option for your power electronics needs.

FAQ

Is IRF60R217 currently in stock?
Yes. IRF60R217 currently shows 3813 unit(s) in stock.
Are there related or alternative parts for IRF60R217?
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What is the mounting type of IRF60R217?
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