Infineon Technologies_IRF640NPBF
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Infineon Technologies
IRF640NPBF

278-IRF640NPBF
PDF Datasheet
MOSFET N-CH 200V 18A TO220AB
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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
23
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Typical Rise Time (ns)
19
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
10
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IRF640NPBF Description

IRF640NPBF Description

The IRF640NPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications that require robust power management. With a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 18A at 25°C, this device is well-suited for power switching and amplification tasks. Its low on-resistance (Rds On) of 150mOhm at 11A and 10V ensures efficient power delivery, while the maximum gate-source voltage (Vgs) of ±20V provides flexibility in gate drive design.

IRF640NPBF Features

  • High Voltage and Current Ratings: The IRF640NPBF boasts a drain-to-source voltage of 200V and can handle a continuous drain current of 18A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With an Rds On of just 150mOhm at 11A and 10V, this MOSFET minimizes power losses and improves efficiency.
  • Flexible Gate Drive: The maximum gate-source voltage of ±20V allows for a wide range of gate drive options.
  • Robust Construction: The IRF640NPBF is housed in a through-hole TO220AB package, providing a reliable and durable solution for demanding environments.
  • Compliance and Certifications: This device is compliant with RoHS3 and REACH regulations, ensuring environmental and safety standards are met.

IRF640NPBF Applications

The IRF640NPBF is well-suited for a variety of applications where high power and efficiency are critical:

  • Power Supplies: Its high voltage and current ratings make it ideal for use in power supply designs, particularly in switching power supplies.
  • Motor Control: The IRF640NPBF's robust performance characteristics make it suitable for motor control applications, where high power and efficient switching are required.
  • Industrial Automation: In industrial settings, this MOSFET can be used for controlling high-power devices and systems, ensuring reliable operation in harsh environments.

Conclusion of IRF640NPBF

The IRF640NPBF from Infineon Technologies is a powerful and reliable N-Channel MOSFET, offering high voltage and current ratings, low on-resistance, and a flexible gate drive. Its robust construction and compliance with environmental and safety standards make it an excellent choice for a wide range of high-power applications, including power supplies, motor control, and industrial automation. While it is marked as "Not For New Designs," for existing applications that require its specific performance characteristics, the IRF640NPBF remains a strong contender.

FAQ

What package or case is IRF640NPBF available in?
IRF640NPBF is available in the TO-220-3 package / case.
Is IRF640NPBF currently in stock?
What operating temperature range does IRF640NPBF support?
What voltage specification is listed for IRF640NPBF?
What is the mounting type of IRF640NPBF?
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