Infineon Technologies Tariff Inquiry

IRF6614TRPBF

IRF6614TRPBF Description

The IRF6614TRPBF is a high-performance N-channel MOSFET from Infineon Technologies, designed for demanding applications that require efficient power management. This device features a DirectFET™ Isometric ST package, offering improved thermal performance and reduced package inductance. With a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 12.7A at 25°C, the IRF6614TRPBF is well-suited for a variety of power electronic applications.

IRF6614TRPBF Features

• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 12.7A at 25°C (Ta), 55A (Tc)
• Gate Charge (Qg): 29 nC @ 4.5V (Max)
• Input Capacitance (Ciss): 2560 pF @ 20V (Max)
• Rds On (Max): 8.3mOhm @ 12.7A, 10V
• Vgs(th) (Max): 2.25V @ 250µA
• Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
• Power Dissipation: 2.1W (Ta), 42W (Tc)
• Mounting Type: Surface Mount
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• RoHS Status: ROHS3 Compliant
• REACH Status: REACH Unaffected
• ECCN: EAR99
• HTSUS: 8541.29.0095
• Package: Tape & Reel (TR)

IRF6614TRPBF Applications

The IRF6614TRPBF is ideal for applications that require high efficiency and low power dissipation, such as:

1. Power Supplies: Due to its low Rds On and high current handling capabilities, the IRF6614TRPBF is suitable for power supply designs, including DC-DC converters and power factor correction circuits.
2. Motor Control: The device's high current and voltage ratings make it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
3. Industrial Automation: The IRF6614TRPBF can be used in various industrial automation applications, such as servo drives and robotic systems, where high efficiency and reliability are critical.

Conclusion of IRF6614TRPBF

The IRF6614TRPBF is a powerful N-channel MOSFET from Infineon Technologies, offering a combination of high efficiency, low power dissipation, and robust performance. Its DirectFET™ Isometric ST package provides improved thermal management and reduced inductance, making it an excellent choice for demanding power electronic applications. While the product is now considered obsolete, it remains a reliable option for existing designs and applications that require its specific performance characteristics.