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IRF6621TRPBF

IRF6621TRPBF Description

The IRF6621TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. This device features a DirectFET™ Isometric SQ package, which offers excellent thermal management and compact design. With a drain-source voltage rating of 30V and continuous drain current capability of 12A at 25°C, the IRF6621TRPBF is suitable for a wide range of power electronics applications.

IRF6621TRPBF Features

• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id): 12A at 25°C, 55A at Tc
• Rds On (Max): 9.1mOhm @ 12A, 10V
• Gate Charge (Qg): 17.5 nC @ 4.5V
• Input Capacitance (Ciss): 1460 pF @ 15V
• Vgs (Max): ±20V
• Vgs(th) (Max): 2.25V @ 250µA
• Power Dissipation: 2.2W (Ta), 42W (Tc)
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Series: HEXFET®
• Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• REACH Status: REACH Unaffected
• RoHS Status: ROHS3 Compliant
• Product Status: Obsolete

IRF6621TRPBF Applications

The IRF6621TRPBF is ideal for applications that require high power handling and efficient switching in a compact form factor. Some specific use cases include:

1. Power Supplies: The high drain current and low Rds On make it suitable for power supply designs, where high efficiency and low power loss are critical.
2. Motor Control: The IRF6621TRPBF can be used in motor control applications, providing high current capability and fast switching speeds for precise motor control.
3. Automotive Electronics: The device's robustness and wide operating temperature range make it suitable for automotive electronics, such as electric power steering and battery management systems.
4. Industrial Control: The IRF6621TRPBF can be used in industrial control applications, where high power handling and efficient switching are required.

Conclusion of IRF6621TRPBF

The IRF6621TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, offering excellent power handling and switching efficiency in a compact DirectFET™ Isometric SQ package. Its unique features, such as low Rds On and high gate charge, make it ideal for a wide range of power electronics applications, including power supplies, motor control, automotive electronics, and industrial control. However, it is important to note that the product is now obsolete, and alternative solutions should be considered for new designs.