Infineon Technologies_IRF6646TR1PBF
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Infineon Technologies
IRF6646TR1PBF

278-IRF6646TR1PBF
PDF Datasheet
MOSFET N-CH 80V 12A DIRECTFET

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Tech Specifications

Operating Temperature
-40°C ~ 150°C (TJ)
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
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IRF6646TR1PBF Description

IRF6646TR1PBF Description

The IRF6646TR1PBF is a high-performance, N-Channel MOSFET from Infineon Technologies, designed for use in a variety of power electronics applications. This device features a DirectFET™ Isometric MN package, which provides excellent thermal performance and ease of integration into surface-mount designs. With a drain-source voltage rating of 80V and a continuous drain current of 12A at 25°C, the IRF6646TR1PBF is well-suited for demanding applications that require high efficiency and reliability.

IRF6646TR1PBF Features

  • High Input Capacitance (Ciss): The IRF6646TR1PBF boasts an impressive input capacitance of 2060 pF at 25V, which helps to minimize switching losses and improve overall efficiency.
  • Low Gate Charge (Qg): With a maximum gate charge of 50 nC at 10V, this MOSFET offers fast switching capabilities and reduced power consumption.
  • Low Rds On: The IRF6646TR1PBF has a maximum Rds On of 9.5 mOhms at 12A and 10V, ensuring low conduction losses and high efficiency in power applications.
  • Wide Vgs(th) Range: The device features a wide threshold voltage range of 4.9V at 150µA, providing flexibility in gate drive requirements.
  • High Power Dissipation: The IRF6646TR1PBF can handle a maximum power dissipation of 2.8W at ambient temperature and 89W at case temperature, making it suitable for high-power applications.
  • Robust Construction: With a moisture sensitivity level (MSL) of 1, this device is designed to withstand harsh environmental conditions and is unaffected by REACH regulations.

IRF6646TR1PBF Applications

The IRF6646TR1PBF is ideal for a variety of high-power applications, including:

  • Power Supplies: Due to its high drain-source voltage and low Rds On, this MOSFET is well-suited for use in power supply designs, where efficiency and reliability are critical.
  • Motor Control: The fast switching capabilities and low gate charge of the IRF6646TR1PBF make it an excellent choice for motor control applications, where precise control and high efficiency are required.
  • Industrial Automation: In industrial automation systems, the IRF6646TR1PBF can be used to drive high-power loads with minimal losses, ensuring optimal performance and reliability.

Conclusion of IRF6646TR1PBF

The IRF6646TR1PBF from Infineon Technologies is a high-performance N-Channel MOSFET that offers a unique combination of high input capacitance, low gate charge, and low Rds On. Its robust construction and wide Vgs(th) range make it an ideal choice for a variety of high-power applications, including power supplies, motor control, and industrial automation. While the product is currently classified as obsolete, it remains a reliable and efficient solution for demanding power electronics applications.

FAQ

What voltage specification is listed for IRF6646TR1PBF?
The listed voltage-related specification for IRF6646TR1PBF is 80 V.
Are there related or alternative parts for IRF6646TR1PBF?
What is IRF6646TR1PBF?
What operating temperature range does IRF6646TR1PBF support?
What is the mounting type of IRF6646TR1PBF?
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