Infineon Technologies_IRF6665TRPBF
original

Infineon Technologies
IRF6665TRPBF

278-IRF6665TRPBF
PDF Datasheet
MOSFET N-CH 100V 4.2A DIRECTFET

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
DIRECTFET™ SH
Drain to Source Voltage (Vdss)
100 V
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Package / Case
DirectFET™ Isometric SH
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IRF6665TRPBF Description

IRF6665TRPBF Description

The IRF6665TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power management and efficient switching. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of up to 4.2A at 25°C, this device offers excellent performance in a wide range of power electronics applications.

IRF6665TRPBF Features

  • High Voltage and Current Ratings: The IRF6665TRPBF can handle up to 100V and 4.2A, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 62mΩ at 5A and 10V, this MOSFET provides efficient power switching with minimal power loss.
  • DirectFET™ Technology: The IRF6665TRPBF utilizes Infineon's DirectFET™ technology, which offers improved gate control and reduced switching losses.
  • Robust Package: The DirectFET™ Isometric SH package provides excellent thermal performance and mechanical stability.
  • Environmental Compliance: This device is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

IRF6665TRPBF Applications

The IRF6665TRPBF is ideal for a variety of power electronics applications, including:

  • Power Supplies: Due to its high voltage and current ratings, this MOSFET is well-suited for power supply designs.
  • Motor Control: The low on-resistance and high current capability make it suitable for motor control applications.
  • Automotive Electronics: The IRF6665TRPBF can be used in automotive applications such as electric power steering and battery management systems.
  • Industrial Control: This MOSFET's robust performance makes it suitable for industrial control systems requiring high power and efficiency.

Conclusion of IRF6665TRPBF

The IRF6665TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, offering excellent voltage and current ratings, low on-resistance, and robust packaging. Its DirectFET™ technology provides improved gate control and reduced switching losses, making it an ideal choice for high-power applications in power supplies, motor control, automotive electronics, and industrial control systems. Despite being classified as obsolete, its unique features and advantages make it a valuable option for specific applications where high performance and reliability are paramount.

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