Infineon Technologies_IRF6668TR1PBF
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Infineon Technologies
IRF6668TR1PBF

278-IRF6668TR1PBF
PDF Datasheet
MOSFET N-CH 80V 55A DIRECTFET MZ

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Tech Specifications

Operating Temperature
-40°C ~ 150°C (TJ)
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
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IRF6668TR1PBF Description

IRF6668TR1PBF Description

The IRF6668TR1PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high power dissipation and low on-resistance. This device features a DirectFET™ MZ package, which offers improved thermal management and reduced footprint compared to traditional packages. With a drain-source voltage rating of 80V and a continuous drain current of 55A at 25°C, the IRF6668TR1PBF is suitable for a wide range of power electronic applications.

IRF6668TR1PBF Features

  • High Power Dissipation: The IRF6668TR1PBF can handle a maximum power dissipation of 2.8W at ambient temperature and 89W at case temperature, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 15mΩ at 12A and 10V, this MOSFET offers low conduction losses and high efficiency.
  • DirectFET™ MZ Package: The unique DirectFET™ MZ package provides improved thermal performance and reduced footprint, enabling better heat dissipation and space savings in designs.
  • High Input Capacitance: The IRF6668TR1PBF has a maximum input capacitance (Ciss) of 1320 pF at 25V, which helps reduce switching losses and improve overall performance.
  • Low Gate Charge: A maximum gate charge (Qg) of 31 nC at 10V ensures fast switching and reduced gate drive power requirements.

IRF6668TR1PBF Applications

The IRF6668TR1PBF is well-suited for a variety of high-power applications, including:

  • Power Supplies: Ideal for high-efficiency power supply designs, such as SMPS and DC-DC converters.
  • Industrial Automation: Suitable for motor control and drive applications in industrial automation systems.
  • Renewable Energy: Can be used in solar inverters and wind turbine converters for efficient energy conversion.
  • Electric Vehicles: Capable of handling the high currents and voltages required in electric vehicle charging systems and powertrains.

Conclusion of IRF6668TR1PBF

The IRF6668TR1PBF is a powerful and efficient N-Channel MOSFET from Infineon Technologies, offering a combination of high power dissipation, low on-resistance, and advanced packaging technology. Its unique features and performance benefits make it an excellent choice for a wide range of high-power applications, including power supplies, industrial automation, renewable energy, and electric vehicles. Despite its obsolescence, the IRF6668TR1PBF remains a popular choice for designers looking for a reliable and high-performance solution in their power electronic designs.

FAQ

What operating temperature range does IRF6668TR1PBF support?
IRF6668TR1PBF has an operating temperature range of -40°C ~ 150°C (TJ).
What is IRF6668TR1PBF?
What voltage specification is listed for IRF6668TR1PBF?
What is the mounting type of IRF6668TR1PBF?
What package or case is IRF6668TR1PBF available in?
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