Infineon Technologies_IRF6725MTR1PBF
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Infineon Technologies
IRF6725MTR1PBF

278-IRF6725MTR1PBF
PDF Datasheet
MOSFET N-CH 30V 28A DIRECTFET

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Tech Specifications

Operating Temperature
-40°C ~ 150°C (TJ)
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 4.5 V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
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IRF6725MTR1PBF Description

IRF6725MTR1PBF Description

The IRF6725MTR1PBF from Infineon Technologies is a 30V N-channel HEXFET® MOSFET in a DIRECTFET™ MX package, designed for high-efficiency power management applications. With an ultra-low on-resistance (Rds(on)) of 2.2mΩ at 10V gate drive, it delivers 28A continuous drain current (Ta) and 170A (Tc), making it ideal for high-current switching. The device features low gate charge (Qg = 54nC @ 4.5V) and input capacitance (Ciss = 4700pF @ 15V), ensuring fast switching performance and reduced power losses.

IRF6725MTR1PBF Features

  • Low Rds(on): Minimizes conduction losses for improved efficiency.
  • High Current Handling: Supports 170A (Tc) in thermally optimized designs.
  • DIRECTFET™ MX Package: Enables superior thermal dissipation (up to 100W power dissipation @ Tc) and compact PCB footprint.
  • Wide Drive Voltage Range: Operates at 4.5V–10V for compatibility with modern gate drivers.
  • Robust Protection: ±20V Vgs(max) ensures reliability in harsh conditions.
  • Surface-Mount Design: Suitable for automated assembly (MSL 1, tape & reel packaging).

IRF6725MTR1PBF Applications

This MOSFET excels in:

  • DC-DC Converters: High-efficiency buck/boost topologies in servers and telecom PSUs.
  • Motor Drives: Low-loss switching for automotive and industrial BLDC motor control.
  • Battery Management Systems (BMS): Efficient power distribution in EVs and energy storage.
  • Synchronous Rectification: Reduces heat in high-frequency SMPS designs.
  • POL (Point-of-Load) Converters: Space-constrained applications benefiting from the DIRECTFET™ package’s thermal performance.

Conclusion of IRF6725MTR1PBF

The IRF6725MTR1PBF combines low Rds(on), high current capability, and advanced packaging to address demanding power electronics challenges. While obsolete, its legacy performance in high-efficiency, high-density designs remains relevant for engineers seeking proven MOSFET solutions. Ideal for thermal-critical, high-switching-speed applications, it sets a benchmark for power MOSFETs in its class.

FAQ

What voltage specification is listed for IRF6725MTR1PBF?
The listed voltage-related specification for IRF6725MTR1PBF is 30 V.
What is IRF6725MTR1PBF?
What package or case is IRF6725MTR1PBF available in?
What operating temperature range does IRF6725MTR1PBF support?
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