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IRF6775MTR1PBF

IRF6775MTR1PBF Description

The IRF6775MTR1PBF from Infineon Technologies is an N-channel HEXFET® MOSFET designed for high-efficiency power management applications. With a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.9A (Ta) / 28A (Tc), this device is optimized for high-power switching. It features a low on-resistance (Rds On) of 56mOhm at 5.6A, 10V, ensuring minimal conduction losses. The DIRECTFET™ MZ package offers superior thermal performance, enabling a maximum power dissipation of 89W (Tc).

IRF6775MTR1PBF Features

• Low Gate Charge (Qg): 36nC @ 10V reduces switching losses, improving efficiency in high-frequency applications.
• High Voltage Tolerance: ±20V Vgs (Max) ensures robust gate drive compatibility.
• Advanced Packaging: DIRECTFET™ Isometric MZ provides excellent thermal dissipation and a compact footprint, ideal for space-constrained designs.
• Optimized Switching Performance: Input capacitance (Ciss) of 1411pF @ 25V balances speed and stability.
• Reliability: REACH Unaffected and MSL 1 (Unlimited) compliance ensures long-term durability in harsh environments.

IRF6775MTR1PBF Applications

This MOSFET is ideal for:

• DC-DC Converters: High efficiency and low Rds On make it suitable for synchronous buck/boost topologies.
• Motor Drives: Robust voltage handling and thermal performance support brushed/brushless motor control.
• Power Supplies: Used in SMPS (Switched-Mode Power Supplies) for telecom, industrial, and computing systems.
• Automotive Systems: Suitable for 48V mild-hybrid systems and battery management due to its high Vdss and thermal resilience.

Conclusion of IRF6775MTR1PBF

The IRF6775MTR1PBF combines low conduction/switching losses, high power density, and superior thermal management, making it a standout choice for demanding power electronics. While obsolete, its legacy performance in high-voltage, high-current applications remains relevant for designs prioritizing efficiency and reliability. Engineers should consider alternative Infineon HEXFET® or DIRECTFET™ successors for new projects.