Infineon Technologies_IRF7313PBF
Infineon Technologies_IRF7313PBF
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Infineon Technologies
IRF7313PBF

289-IRF7313PBF
PDF Datasheet
MOSFET 2N-CH 30V 6.5A 8SO

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
-
Configuration
2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds
650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
33nC @ 10V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Discontinued at Digi-Key
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IRF7313PBF Description

IRF7313PBF Description

The IRF7313PBF from Infineon Technologies is a dual N-channel HEXFET® MOSFET in an 8-pin SOIC package, designed for high-efficiency power switching applications. With a 30V drain-to-source voltage (Vdss) and 6.5A continuous drain current (Id), it offers robust performance in compact surface-mount designs. This MOSFET array features low on-resistance (Rds(on)) of 29mΩ at 10V Vgs, ensuring minimal conduction losses. Its fast switching characteristics, supported by a gate charge (Qg) of 33nC at 10V, make it suitable for high-frequency applications. The device is RoHS3 compliant and REACH unaffected, meeting stringent environmental standards.

IRF7313PBF Features

  • Low Rds(on): 29mΩ @ 5.8A, 10V for reduced power dissipation.
  • High Current Handling: 6.5A continuous drain current at 25°C.
  • Fast Switching: Optimized gate charge (33nC) for efficient high-frequency operation.
  • Low Threshold Voltage (Vgs(th)): 1V @ 250µA, enabling compatibility with low-voltage drivers.
  • Dual N-Channel Configuration: Ideal for synchronous rectification and half-bridge topologies.
  • Robust Packaging: 8SOIC surface-mount package with MSL1 (unlimited) moisture sensitivity.
  • Reliable HEXFET® Technology: Low input capacitance (650pF @ 25V) for improved dynamic performance.

IRF7313PBF Applications

This MOSFET array excels in:

  • DC-DC Converters: Synchronous buck/boost circuits due to low Rds(on) and fast switching.
  • Motor Control: H-bridge drivers for brushed DC motors.
  • Power Management: Load switches, battery protection, and OR-ing applications.
  • Portable Electronics: Space-constrained designs requiring high efficiency.
  • Automotive Systems: Auxiliary power distribution with 30V rating.

Conclusion of IRF7313PBF

The IRF7313PBF combines low conduction losses, high current capability, and compact packaging, making it a versatile choice for power electronics. Its dual N-channel integration reduces board space while improving thermal performance. Engineers favor this MOSFET for efficiency-critical applications, leveraging Infineon’s HEXFET® technology for reliability. Whether in consumer electronics, industrial controls, or automotive subsystems, this device delivers optimal performance in demanding environments.

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