Infineon Technologies_IRF7341GTRPBF
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Infineon Technologies
IRF7341GTRPBF

289-IRF7341GTRPBF
PDF Datasheet
MOSFET 2N-CH 55V 5.1A 8SO
10 Weeks

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Tech Specifications

Configuration
2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)
31
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Typical Rise Time (ns)
7.7
PPAP
No
Channel Mode
Enhancement
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IRF7341GTRPBF Description

IRF7341GTRPBF Description

The IRF7341GTRPBF is a high-performance MOSFET (Metal Oxide) device from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. This 2N-channel device is part of the HEXFET® series and is well-suited for a variety of electronic systems.

IRF7341GTRPBF Features

  • Technical Specifications: The IRF7341GTRPBF boasts a maximum drain-to-source voltage (Vdss) of 55V and can handle a continuous drain current (Id) of 5.1A at 25°C. It features a low on-resistance (Rds On) of 50mOhm at 5.1A and 10V, ensuring efficient power delivery. The gate charge (Qg) is maximized at 44nC at 10V, and the input capacitance (Ciss) is maximized at 780pF at 25V, contributing to fast switching speeds.

  • Performance Benefits: With a threshold voltage (Vgs(th)) of 1V at a minimum drain current of 250µA, the IRF7341GTRPBF offers precise control over the switching process. Its surface mount design allows for compact integration in densely packed circuits, and the device is rated for a maximum power dissipation of 2.4W.

  • Unique Features and Advantages: The IRF7341GTRPBF is compliant with the RoHS3 directive, making it an environmentally friendly choice. Its moisture sensitivity level (MSL) is 1, indicating unlimited storage time before reflow soldering, which is a significant advantage in manufacturing processes. The device is also classified under the EAR99 and REACH Unaffected categories, simplifying international trade and regulatory compliance.

IRF7341GTRPBF Applications

The IRF7341GTRPBF is ideal for applications where high voltage and current handling are required, combined with the need for efficient power management. Specific use cases include:

  • Power Supplies: Due to its high voltage and current ratings, the IRF7341GTRPBF is suitable for power supply designs, particularly in consumer electronics and industrial equipment.

  • Motor Controls: Its robust switching capabilities make it a good fit for motor control applications, such as in electric vehicles or industrial automation systems.

  • Audio Amplifiers: The low on-resistance and high current handling capabilities are beneficial in audio amplifier designs, ensuring high fidelity and power efficiency.

Conclusion of IRF7341GTRPBF

The IRF7341GTRPBF from Infineon Technologies is a versatile MOSFET that delivers high performance in power-handling applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching make it an excellent choice for power supplies, motor controls, and audio amplifiers. The device's compliance with environmental regulations and its ease of integration in surface mount applications further enhance its appeal in the electronics industry.

FAQ

What package or case is IRF7341GTRPBF available in?
IRF7341GTRPBF is available in the 8-SOIC (0.154", 3.90mm Width) package / case.
What operating temperature range does IRF7341GTRPBF support?
What is the standard lead time for IRF7341GTRPBF?
What voltage specification is listed for IRF7341GTRPBF?
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