Infineon Technologies_IRF7341QTRPBF
Infineon Technologies_IRF7341QTRPBF
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Infineon Technologies
IRF7341QTRPBF

289-IRF7341QTRPBF
PDF Datasheet
MOSFET 2N-CH 55V 5.1A 8-SOIC

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Tech Specifications

FET Feature
Logic Level Gate
Configuration
2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds
780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
50mOhm @ 5.1A, 10V
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IRF7341QTRPBF Description

IRF7341QTRPBF Description

The IRF7341QTRPBF is a high-performance MOSFET from Infineon Technologies, designed for logic level gate applications. This N-channel MOSFET offers superior performance with a maximum drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 5.1A at 25°C. The device is packaged in an 8-pin SOIC package, making it suitable for surface mount applications.

IRF7341QTRPBF Features

  • Logic Level Gate: The IRF7341QTRPBF is designed for logic level gate applications, ensuring compatibility with low-voltage logic systems.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 780pF at 25V, this MOSFET minimizes capacitive loading on the driving circuit, improving overall system performance.
  • Low Gate Charge: The maximum gate charge (Qg) is 44nC at 10V, reducing switching losses and improving efficiency.
  • Low Rds On: The maximum Rds On is 50mOhm at 5.1A and 10V, providing low on-resistance for efficient power dissipation.
  • Wide Vgs(th) Range: The maximum Vgs(th) is 1V at a minimum drain current of 250µA, ensuring reliable switching performance across various operating conditions.
  • High Power Handling: The IRF7341QTRPBF can handle a maximum power dissipation of 2.4W, making it suitable for applications requiring high power handling.
  • Low Moisture Sensitivity: With a moisture sensitivity level (MSL) of 1, this device can be stored and handled without special precautions, simplifying the manufacturing process.

IRF7341QTRPBF Applications

The IRF7341QTRPBF is ideal for a variety of applications where high performance and reliability are critical. Some specific use cases include:

  • Automotive Electronics: The IRF7341QTRPBF's high voltage and current ratings make it suitable for automotive applications such as power windows, seat controls, and lighting systems.
  • Industrial Control Systems: This MOSFET's low on-resistance and high power handling capabilities make it an excellent choice for motor drives, power supplies, and other industrial control applications.
  • Telecommunications Equipment: The IRF7341QTRPBF's low input capacitance and gate charge make it suitable for telecommunications equipment, where high-speed switching and low noise are essential.
  • Power Management Systems: This MOSFET's high power handling and low Rds On make it ideal for power management systems in consumer electronics, such as battery chargers and power adapters.

Conclusion of IRF7341QTRPBF

The IRF7341QTRPBF from Infineon Technologies is a high-performance MOSFET designed for logic level gate applications. Its unique combination of high voltage and current ratings, low on-resistance, and low input capacitance make it an ideal choice for a wide range of applications, including automotive electronics, industrial control systems, telecommunications equipment, and power management systems. While the IRF7341QTRPBF is now considered obsolete, its performance and reliability make it a valuable component for legacy systems and applications where high performance is critical.

FAQ

What is IRF7341QTRPBF?
IRF7341QTRPBF is a FET, MOSFET Arrays from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
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