Infineon Technologies_IRF7353D2
Infineon Technologies_IRF7353D2
original

Infineon Technologies
IRF7353D2

278-IRF7353D2
PDF Datasheet
MOSFET N-CH 30V 6.5A 8SO

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
8-SO
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
2W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
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IRF7353D2 Description

IRF7353D2 Description

The IRF7353D2 from Infineon Technologies is an N-channel MOSFET designed for high-efficiency power switching applications. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.5A, this device is optimized for low-voltage, high-current scenarios. It features a low on-resistance (Rds(on)) of 29mOhm at 5.8A and 10V gate drive, ensuring minimal conduction losses. The MOSFET integrates a Schottky diode (isolated), enhancing its performance in synchronous rectification and freewheeling applications. Packaged in an 8-pin SOIC (8SO), it is suitable for surface-mount designs.

IRF7353D2 Features

  • Low Rds(on): 29mOhm @ 10V gate drive, improving efficiency in power conversion.
  • Schottky Diode Integration: Reduces reverse recovery losses, ideal for high-frequency switching.
  • Fast Switching: Low gate charge (Qg) of 33nC @ 10V minimizes switching losses.
  • Robust Gate Drive: Supports ±20V Vgs(max), offering flexibility in drive circuitry.
  • Thermal Performance: Rated for 2W power dissipation (Ta), ensuring reliability in compact designs.
  • Obsolete Status: While no longer in production, it remains a viable choice for legacy systems.

IRF7353D2 Applications

This MOSFET excels in:

  • DC-DC Converters: Synchronous buck/boost topologies due to low Rds(on) and integrated diode.
  • Motor Control: Efficient driving of small motors in robotics or automotive systems.
  • Power Management: Load switching in portable devices, UPS, and battery protection circuits.
  • LED Drivers: High-frequency PWM dimming applications requiring low conduction losses.

Conclusion of IRF7353D2

The IRF7353D2 combines low on-resistance, fast switching, and integrated Schottky diode features, making it a strong candidate for energy-efficient power designs. While marked as obsolete, its performance metrics ensure continued relevance in legacy or niche applications requiring 30V, 6.5A capabilities. Engineers should evaluate alternative modern equivalents for new designs but may leverage this MOSFET for proven reliability in existing systems.

FAQ

What package or case is IRF7353D2 available in?
IRF7353D2 is available in the 8-SOIC (0.154", 3.90mm Width) package / case.
What operating temperature range does IRF7353D2 support?
What is IRF7353D2?
What voltage specification is listed for IRF7353D2?
Is IRF7353D2 currently in stock?
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