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IRF7465

IRF7465 Description

The IRF7465 from Infineon Technologies is an N-channel HEXFET® MOSFET designed for medium-power switching applications. With a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 1.9A, it offers robust performance in compact 8-pin SOIC (8SO) surface-mount packaging. This MOSFET features a low on-resistance (Rds(on)) of 280mΩ at 10V gate drive, ensuring efficient power handling with minimal losses. Though marked as obsolete, its specifications remain relevant for legacy designs or replacements.

IRF7465 Features

• Low Gate Charge (Qg): 15nC @ 10V reduces switching losses, enhancing efficiency in high-frequency circuits.
• Fast Switching: Low input capacitance (Ciss) of 330pF @ 25V enables rapid turn-on/off transitions.
• High Voltage Tolerance: Vgs(max) of ±30V provides flexibility in gate drive design.
• Thermal Stability: 2.5W power dissipation (Ta) ensures reliable operation under moderate loads.
• Robust Construction: MSL 1 (Unlimited) moisture sensitivity and REACH compliance suit industrial environments.

IRF7465 Applications

Ideal for:

• DC-DC Converters: Efficient power conversion in low-to-medium current designs.
• Motor Control: Drives small motors or actuators in automotive/industrial systems.
• Load Switching: Reliable ON/OFF control in power management circuits.
• Legacy Systems: Replacement or repair in obsolete equipment requiring 150V/1.9A ratings.

Conclusion of IRF7465

The IRF7465 balances voltage handling, low Rds(on), and compact form factor, making it a pragmatic choice for space-constrained, medium-power applications. While newer alternatives exist, its proven HEXFET® technology and Infineon’s reliability sustain its utility in niche or legacy designs. Engineers valuing efficiency, thermal performance, and durability may still find it advantageous for specific use cases.