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IRF7759L2TRPBF

IRF7759L2TRPBF Description

The IRF7759L2TRPBF is a high-performance MOSFET N-CH 75V 26A DIRECTFET from Infineon Technologies. This single FET is designed for applications requiring high power dissipation and efficient switching. With a DirectFET™ Isometric L8 package, it offers excellent thermal performance and ease of mounting. The IRF7759L2TRPBF is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.

IRF7759L2TRPBF Features

• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id): 26A (Ta), 375A (Tc)
• Rds On (Max) @ Id, Vgs: 2.3mOhm @ 96A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 12222 pF @ 25V
• Vgs (Max): ±20V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
• Mounting Type: Surface Mount
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

IRF7759L2TRPBF Applications

The IRF7759L2TRPBF is ideal for applications that demand high power efficiency and fast switching capabilities. Some specific use cases include:

• Industrial Motor Control: Its high current and voltage ratings make it suitable for motor control applications in industrial settings.
• Power Supplies: The IRF7759L2TRPBF can be used in power supply designs where high efficiency and low power dissipation are critical.
• Automotive Electronics: Its robustness and high power dissipation capabilities make it suitable for automotive electronics, such as inverter systems.

Conclusion of IRF7759L2TRPBF

The IRF7759L2TRPBF is a powerful and efficient MOSFET from Infineon Technologies. Its high power dissipation, low Rds On, and fast switching capabilities make it an excellent choice for high-power applications. Despite being classified as obsolete, its unique features and advantages still make it a valuable option for specific use cases in industrial, power supply, and automotive electronics.