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IRF7807VTRPBF

IRF7807VTRPBF Description

The IRF7807VTRPBF is an N-channel HEXFET® power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. With a 30V drain-to-source voltage (Vdss) and 8.3A continuous drain current (Id), it offers robust performance in compact surface-mount packages. This MOSFET features a low on-resistance (Rds On) of 25mOhm at 7A, 4.5V, ensuring minimal conduction losses. Its gate charge (Qg) of 14nC at 5V enables fast switching, making it suitable for high-frequency applications. Although marked as obsolete, it remains a reliable choice for legacy designs requiring stable performance in power management circuits.

IRF7807VTRPBF Features

• Low Rds On: 25mOhm at 4.5V drive voltage, reducing power dissipation.
• Fast Switching: Optimized gate charge (14nC) for efficient high-frequency operation.
• High Current Handling: Supports up to 8.3A continuous current at 25°C.
• Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexible drive requirements.
• Surface-Mount Design: 8SO package in Tape & Reel (TR) for automated assembly.
• Robust HEXFET® Technology: Delivers high reliability and thermal performance.
• RoHS3 & REACH Compliant: Meets environmental and safety standards.

IRF7807VTRPBF Applications

This MOSFET is ideal for:

• DC-DC Converters: Efficient power conversion in step-down/step-up topologies.
• Motor Control: Driving brushed DC motors in robotics and automotive systems.
• Load Switching: Power distribution in portable devices and battery management.
• LED Drivers: High-efficiency current regulation for lighting systems.
• Legacy Electronics: Suitable for maintaining or upgrading older designs requiring discontinued components.

Conclusion of IRF7807VTRPBF

The IRF7807VTRPBF provides a balance of low conduction losses, fast switching, and high current capability, making it a strong candidate for power electronics despite its obsolete status. Its HEXFET® technology and surface-mount packaging ensure reliability in demanding applications. Engineers working on DC-DC conversion, motor drives, or legacy systems may find this MOSFET a cost-effective solution for efficient power handling. While newer alternatives exist, its proven performance justifies consideration for specific use cases.