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IRF7809
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IRF7809 Description
IRF7809 Description
The IRF7809 from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 17.6A at 25°C, this MOSFET is optimized for low on-resistance (7.5mΩ at 15A, 4.5V) and fast switching performance. Its input capacitance (Ciss) of 7300pF @ 16V and gate charge (Qg) of 86nC @ 5V ensure efficient drive characteristics, making it suitable for high-frequency applications. The device is housed in an 8-pin SOIC package and is surface-mountable, aligning with modern PCB assembly processes.
IRF7809 Features
- Low Rds(on): 7.5mΩ minimizes conduction losses, enhancing power efficiency.
- High Current Handling: 17.6A continuous drain current supports robust performance in power circuits.
- Fast Switching: Low gate charge (86nC) and moderate input capacitance enable rapid turn-on/off.
- Wide Drive Voltage Range: 4.5V drive voltage ensures compatibility with logic-level and standard gate drivers.
- Surface-Mount Design: 8SO package facilitates compact, high-density PCB layouts.
- Reliability: MSL 1 (Unlimited) moisture sensitivity and REACH Unaffected status ensure long-term stability.
IRF7809 Applications
The IRF7809 excels in DC-DC converters, motor control, and power management systems where low Rds(on) and high current capability are critical. Its fast switching makes it ideal for:
- Synchronous rectification in switch-mode power supplies (SMPS).
- Load switching in automotive and industrial systems.
- Battery management circuits requiring efficient power handling.
- Portable electronics due to its compact form factor and low power dissipation (3.5W max).
Conclusion of IRF7809
The IRF7809 is a high-performance N-channel MOSFET offering low on-resistance, high current capacity, and fast switching, making it a versatile choice for power electronics. While marked as obsolete, its proven reliability in DC-DC conversion, motor drives, and SMPS ensures continued relevance in legacy designs. Engineers seeking a balance of efficiency and compactness will find this HEXFET® MOSFET a dependable solution.



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