Infineon Technologies_IRF7809
Infineon Technologies_IRF7809
original

Infineon Technologies
IRF7809

278-IRF7809
PDF Datasheet
MOSFET N-CH 30V 17.6A 8SO

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
7300 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 5 V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
7.5mOhm @ 15A, 4.5V
Show More

IRF7809 Description

IRF7809 Description

The IRF7809 from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 17.6A at 25°C, this MOSFET is optimized for low on-resistance (7.5mΩ at 15A, 4.5V) and fast switching performance. Its input capacitance (Ciss) of 7300pF @ 16V and gate charge (Qg) of 86nC @ 5V ensure efficient drive characteristics, making it suitable for high-frequency applications. The device is housed in an 8-pin SOIC package and is surface-mountable, aligning with modern PCB assembly processes.

IRF7809 Features

  • Low Rds(on): 7.5mΩ minimizes conduction losses, enhancing power efficiency.
  • High Current Handling: 17.6A continuous drain current supports robust performance in power circuits.
  • Fast Switching: Low gate charge (86nC) and moderate input capacitance enable rapid turn-on/off.
  • Wide Drive Voltage Range: 4.5V drive voltage ensures compatibility with logic-level and standard gate drivers.
  • Surface-Mount Design: 8SO package facilitates compact, high-density PCB layouts.
  • Reliability: MSL 1 (Unlimited) moisture sensitivity and REACH Unaffected status ensure long-term stability.

IRF7809 Applications

The IRF7809 excels in DC-DC converters, motor control, and power management systems where low Rds(on) and high current capability are critical. Its fast switching makes it ideal for:

  • Synchronous rectification in switch-mode power supplies (SMPS).
  • Load switching in automotive and industrial systems.
  • Battery management circuits requiring efficient power handling.
  • Portable electronics due to its compact form factor and low power dissipation (3.5W max).

Conclusion of IRF7809

The IRF7809 is a high-performance N-channel MOSFET offering low on-resistance, high current capacity, and fast switching, making it a versatile choice for power electronics. While marked as obsolete, its proven reliability in DC-DC conversion, motor drives, and SMPS ensures continued relevance in legacy designs. Engineers seeking a balance of efficiency and compactness will find this HEXFET® MOSFET a dependable solution.

FAQ

What package or case is IRF7809 available in?
IRF7809 is available in the 8-SOIC (0.154", 3.90mm Width) package / case.
What is the mounting type of IRF7809?
Is IRF7809 currently in stock?
What voltage specification is listed for IRF7809?
What is IRF7809?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ