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IRF7855PBF

IRF7855PBF Description

The IRF7855PBF from Infineon Technologies is an N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 60V drain-to-source voltage (Vdss) and 12A continuous drain current (Id), it delivers robust performance in compact surface-mount packages. This MOSFET features a low on-resistance (Rds(on)) of 9.4mΩ at 10V Vgs, ensuring minimal conduction losses. Its 1560pF input capacitance (Ciss) and 39nC total gate charge (Qg) enable fast switching, making it ideal for high-frequency applications. The device is RoHS3 compliant, REACH unaffected, and rated for MSL 1 (unlimited) moisture sensitivity, ensuring reliability in demanding environments.

IRF7855PBF Features

• Low Rds(on): 9.4mΩ @ 12A, 10V for reduced power dissipation.
• High Current Handling: 12A continuous drain current (Ta = 25°C).
• Fast Switching: Optimized gate charge (39nC @ 10V) and low Ciss (1560pF).
• Wide Vgs Range: ±20V gate-to-source voltage tolerance.
• Robust Construction: HEXFET® technology ensures high efficiency and thermal stability.
• Surface-Mount Design: 8-SO package for space-constrained PCB layouts.
• Compliance: RoHS3, REACH, and ECCN EAR99 certified.

IRF7855PBF Applications

This MOSFET excels in:

• DC-DC Converters: Efficient power conversion in step-down/step-up topologies.
• Motor Drives: High-current switching for brushed/brushless motors.
• Power Management: Load switches, battery protection, and hot-swap circuits.
• Automotive Systems: Auxiliary power controls and LED drivers.
• Industrial SMPS: High-frequency switching power supplies.

Conclusion of IRF7855PBF

The IRF7855PBF stands out for its low Rds(on), high current capability, and fast switching performance, making it a superior choice for power electronics designers. Its HEXFET® technology ensures reliability, while the 8-SO package offers compact integration. Ideal for automotive, industrial, and consumer applications, this MOSFET balances efficiency, thermal performance, and cost-effectiveness. Engineers seeking a high-performance, surface-mount MOSFET for demanding power circuits will find the IRF7855PBF an optimal solution.