Infineon Technologies_IRF8707GTRPBF
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Infineon Technologies
IRF8707GTRPBF

278-IRF8707GTRPBF
PDF Datasheet
MOSFET N-CH 30V 11A 8SO

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Product Status
Obsolete
Supplier Device Package
8-SO
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
2.5W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
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IRF8707GTRPBF Description

IRF8707GTRPBF Description

The IRF8707GTRPBF is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of applications requiring high efficiency and reliability. With a drain-source voltage of 30V and a continuous drain current of 11A at 25°C, this MOSFET is well-suited for power switching and amplification tasks. Its low on-resistance of 11.9mOhm at 11A and 10V, combined with a maximum gate-source voltage of ±20V, ensures excellent performance and control.

IRF8707GTRPBF Features

  • High Drain-Source Voltage (Vdss): 30V, allowing it to handle high voltage applications.
  • Low On-Resistance (Rds On): 11.9mOhm at 11A and 10V, minimizing power losses.
  • High Continuous Drain Current (Id): 11A at 25°C, suitable for demanding power applications.
  • Wide Gate-Source Voltage Range (Vgs): ±20V, providing flexibility in gate drive requirements.
  • Low Gate Threshold Voltage (Vgs(th)): 2.35V at 25µA, ensuring easy turn-on.
  • Low Gate Charge (Qg): 9.3nC at 4.5V, reducing switching losses.
  • Surface Mount Technology:
  • Compliance with RoHS3 and REACH standards: Ensuring environmental and health safety.
  • Low Moisture Sensitivity Level (MSL): Level 1, suitable for a wide range of manufacturing environments.

IRF8707GTRPBF Applications

The IRF8707GTRPBF is ideal for applications where high efficiency, low power loss, and reliable operation are critical. Some specific use cases include:

  • Power Switching: In power supply units and battery management systems, where high voltage and current handling are required.
  • Motor Control: For electric vehicles, industrial automation, and robotics, where precise control and high efficiency are necessary.
  • Audio Amplification: In high-fidelity audio equipment, where low distortion and high power output are desired.

Conclusion of IRF8707GTRPBF

The IRF8707GTRPBF is a versatile and high-performance MOSFET, offering a combination of high voltage and current capabilities, low on-resistance, and compliance with environmental standards. While it is now considered obsolete, it remains a solid choice for legacy systems or applications where its specific characteristics are required. Its unique features make it suitable for a variety of high-power applications, ensuring efficient and reliable operation.

FAQ

What is IRF8707GTRPBF?
IRF8707GTRPBF is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is IRF8707GTRPBF available in?
What operating temperature range does IRF8707GTRPBF support?
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