Infineon Technologies_IRFB23N20D
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Infineon Technologies
IRFB23N20D

278-IRFB23N20D
PDF Datasheet
MOSFET N-CH 200V 24A TO220AB

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
TO-220AB
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
3.8W (Ta), 170W (Tc)
Package / Case
TO-220-3
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IRFB23N20D Description

IRFB23N20D Description

The IRFB23N20D from Infineon Technologies is a 200V N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a continuous drain current (Id) of 24A (Tc) and a low on-resistance (Rds(on)) of 100mOhm at 10V gate drive, this MOSFET offers excellent performance in power conversion circuits. Its 200V drain-to-source voltage (Vdss) rating makes it suitable for medium-voltage applications, while the ±30V gate-to-source voltage (Vgs) tolerance ensures robust operation in demanding environments. Although marked as obsolete, its legacy design remains relevant for specific use cases requiring reliability and efficiency.

IRFB23N20D Features

  • Low Rds(on): 100mOhm at 14A, 10V, minimizing conduction losses.
  • High Current Handling: 24A continuous drain current (Tc) for power-dense designs.
  • Fast Switching: Moderate gate charge (Qg) of 86nC at 10V and input capacitance (Ciss) of 1960pF, balancing speed and drive requirements.
  • Robust Construction: TO-220AB through-hole package with MSL 1 (unlimited) moisture sensitivity, ensuring durability.
  • Thermal Performance: 170W (Tc) power dissipation capability, supported by efficient heat sinking.

IRFB23N20D Applications

This MOSFET excels in:

  • Switching Power Supplies: High-efficiency DC-DC converters and SMPS designs.
  • Motor Control: Brushed/brushless motor drivers in industrial and automotive systems.
  • Inverters: Uninterruptible power supplies (UPS) and solar inverters.
  • Audio Amplifiers: Class-D amplification stages requiring low distortion.
  • Legacy Systems: Maintenance or replication of older designs where obsolete components are still viable.

Conclusion of IRFB23N20D

The IRFB23N20D remains a technically capable MOSFET for medium-voltage, high-current switching, despite its obsolete status. Its low Rds(on), high power dissipation, and TO-220AB package make it a pragmatic choice for engineers needing reliable performance in power electronics. While newer alternatives may offer improved specs, this device is ideal for cost-sensitive or legacy applications where proven performance outweighs obsolescence concerns.

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