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IRFB23N20DPBF

IRFB23N20DPBF Description

The IRFB23N20DPBF is a high-performance N-Channel MOSFET designed by Infineon Technologies. It features a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 24A at 25°C. With a maximum power dissipation of 3.8W at ambient temperature and 170W at case temperature, this MOSFET is suitable for high-power applications. The IRFB23N20DPBF is packaged in a through-hole TO220AB tube package.

IRFB23N20DPBF Features

• N-Channel MOSFET with 200V drain-to-source voltage (Vdss)
• Continuous drain current (Id) of 24A at 25°C
• Maximum power dissipation of 3.8W at ambient temperature (Ta) and 170W at case temperature (Tc)
• Low on-resistance (Rds On) of 100mOhm at 14A, 10V
• High gate threshold voltage (Vgs(th)) of 5.5V at 250µA
• Maximum gate-source voltage (Vgs) of ±30V
• Drive voltage of 10V for maximum Rds On and minimum Rds On
• Low input capacitance (Ciss) of 1960 pF at 25V
• Low gate charge (Qg) of 86 nC at 10V
• Moisture Sensitivity Level (MSL) of 1 (unlimited)
• REACH Unaffected and ROHS3 Compliant
• EAR99 ECCN and HTSUS 8541.29.0095 classifications

IRFB23N20DPBF Applications

The IRFB23N20DPBF is ideal for various high-power applications due to its high voltage and current ratings. Some specific use cases include:

1. Power switching and amplification in industrial and automotive electronics
2. Motor control and drives for electric vehicles and robotics
3. Power supply and converter circuits in telecommunications and renewable energy systems
4. High-voltage signal processing and amplification in audio and video equipment

Conclusion of IRFB23N20DPBF

The IRFB23N20DPBF is a high-performance N-Channel MOSFET from Infineon Technologies, offering excellent electrical characteristics and robustness in high-power applications. Its unique features, such as low on-resistance, high gate threshold voltage, and low input capacitance, make it an ideal choice for demanding power electronics applications. While the IRFB23N20DPBF is now considered obsolete, it remains a reliable and efficient solution for various high-power switching and amplification tasks in the electronics industry.