Infineon Technologies_IRFB38N20DPBF
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Infineon Technologies
IRFB38N20DPBF

278-IRFB38N20DPBF
PDF Datasheet
MOSFET N-CH 200V 43A TO220AB
10 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
29
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V
Typical Rise Time (ns)
95
PPAP
No
Channel Mode
Enhancement
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IRFB38N20DPBF Description

IRFB38N20DPBF Description

The IRFB38N20DPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications in the electronics industry. This device features a 200V drain-to-source voltage rating, capable of handling continuous drain currents up to 43A at 25°C. With a maximum power dissipation of 3.8W at ambient temperature and 300W at case temperature, it is well-suited for high-power applications. The IRFB38N20DPBF is available in a through-hole TO220AB package, making it ideal for a wide range of electronic devices.

IRFB38N20DPBF Features

  • 200V drain-to-source voltage (Vdss)
  • 43A continuous drain current at 25°C
  • 3.8W maximum power dissipation at ambient temperature (Ta)
  • 300W maximum power dissipation at case temperature (Tc)
  • 54mOhm maximum Rds(on) at 26A, 10V
  • 5V maximum threshold voltage (Vgs(th)) at 250µA
  • ±20V maximum gate-to-source voltage (Vgs)
  • 2900 pF maximum input capacitance (Ciss) at 25V
  • 91 nC maximum gate charge (Qg) at 10V
  • RoHS3 compliant
  • REACH unaffected
  • Moisture sensitivity level (MSL) 1 (unlimited)
  • EAR99 ECCN
  • HEXFET® series

IRFB38N20DPBF Applications

The IRFB38N20DPBF is an excellent choice for applications requiring high power and voltage handling capabilities. Some ideal use cases include:

  1. Power electronics: Power supplies, motor controls, and inverters
  2. Industrial automation: Robotics, conveyor systems, and machine controls
  3. Renewable energy: Solar inverters, wind turbine controls, and energy storage systems
  4. Automotive: Electric vehicle (EV) charging systems, battery management, and powertrain controls
  5. Consumer electronics: High-power audio amplifiers, lighting systems, and home appliances

Conclusion of IRFB38N20DPBF

The IRFB38N20DPBF is a robust and reliable N-Channel MOSFET, offering excellent performance in high-power and high-voltage applications. Its unique features, such as low Rds(on), high input capacitance, and compliance with RoHS and REACH regulations, make it a superior choice over similar models. With its wide range of applications, the IRFB38N20DPBF is an indispensable component in modern electronics design.

FAQ

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Yes. IRFB38N20DPBF currently shows 1267 unit(s) in stock.
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