Infineon Technologies
IRFB7540PBF

278-IRFB7540PBF
PDF Datasheet
MOSFET N-CH 60V 110A TO220
12 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
58
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
4555 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Typical Rise Time (ns)
76
PPAP
No
Channel Mode
Enhancement
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IRFB7540PBF Description

IRFB7540PBF Description

The IRFB7540PBF is a high-performance N-channel MOSFET manufactured by Infineon Technologies. This device is part of the HEXFET® and StrongIRFET™ series, offering superior electrical characteristics and ruggedness. The IRFB7540PBF is designed for applications requiring high power, high speed, and high efficiency. It is available in a through-hole TO220 package and is compliant with the latest environmental regulations.

IRFB7540PBF Features

  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25V
  • Vgs (Max): ±20V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Power Dissipation (Max): 160W (Tc)
  • Mounting Type: Through Hole
  • Package: Tube
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

IRFB7540PBF Applications

The IRFB7540PBF is ideal for a wide range of applications where high power and high efficiency are required. Some specific use cases include:

  1. Power Supplies: The IRFB7540PBF's high current and voltage ratings make it suitable for power supply designs, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  2. Industrial Control: This MOSFET can be used in motor control applications, such as electric vehicles, robotics, and industrial automation systems.
  3. Telecommunications: The IRFB7540PBF's high-speed switching capabilities make it suitable for telecommunications equipment, such as power amplifiers and signal conditioning circuits.
  4. RF Amplifiers: Due to its low gate charge and high input capacitance, the IRFB7540PBF is ideal for RF amplifiers in wireless communication systems.

Conclusion of IRFB7540PBF

The IRFB7540PBF is a robust and high-performance N-channel MOSFET from Infineon Technologies. Its unique combination of high power, high speed, and low on-resistance makes it an excellent choice for a wide range of applications, including power supplies, industrial control, telecommunications, and RF amplifiers. With its compliance with environmental regulations and its rugged design, the IRFB7540PBF is a reliable and efficient solution for demanding electronic systems.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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