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IRFH5004TRPBF

IRFH5004TRPBF Description

The IRFH5004TRPBF by Infineon Technologies is a N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 40V drain-to-source voltage (Vdss) and continuous drain current (Id) ratings of 28A (ambient) or 100A (case), this device offers robust performance in compact 8PQFN surface-mount packaging. Its ultra-low on-resistance (Rds(on)) of 2.6mΩ at 10V gate drive minimizes conduction losses, making it ideal for high-current applications. Although marked Obsolete, it remains a reliable choice for legacy designs requiring high power density and thermal efficiency.

IRFH5004TRPBF Features

• Low Rds(on): 2.6mΩ @ 50A, 10V ensures reduced power dissipation.
• High Current Handling: Supports up to 100A (Tc) with proper thermal management.
• Fast Switching: Gate charge (Qg) of 110nC @ 10V and input capacitance (Ciss) of 4490pF @ 20V enable efficient high-frequency operation.
• Robust Gate Drive: ±20V Vgs tolerance enhances reliability in harsh environments.
• Thermal Performance: 156W max power dissipation (Tc) ensures stability in high-power applications.
• Compliance: ROHS3 and REACH unaffected, with MSL 1 (unlimited) moisture sensitivity for easy handling.

IRFH5004TRPBF Applications

• DC-DC Converters: Optimized for synchronous buck/boost topologies due to low Rds(on).
• Motor Drives: High current capability suits brushed/brushless motor control.
• Power Supplies: Efficient switching in server, telecom, and industrial SMPS.
• Battery Management: Ideal for discharge protection and load switching in Li-ion systems.
• Automotive Systems: Suitable for auxiliary power modules (though design-ins may require newer alternatives).

Conclusion of IRFH5004TRPBF

The IRFH5004TRPBF excels in high-current, low-loss applications, leveraging Infineon’s HEXFET® technology for superior thermal and electrical performance. While obsolete, its combination of low Rds(on), high current tolerance, and compact packaging makes it a viable option for legacy or cost-sensitive designs. Engineers should evaluate newer alternatives for forward-looking projects but can rely on this MOSFET for proven performance in demanding power circuits.