Infineon Technologies_IRFH5015TRPBF
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Infineon Technologies
IRFH5015TRPBF

278-IRFH5015TRPBF
PDF Datasheet
MOSFET N-CH 150V 10A/56A 8PQFN
12 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
14
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Typical Rise Time (ns)
9.7
PPAP
No
Channel Mode
Enhancement
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IRFH5015TRPBF Description

IRFH5015TRPBF Description

The IRFH5015TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and power handling. This device features a HEXFET® series configuration, which offers superior switching performance and thermal management. With a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 10A at 25°C, the IRFH5015TRPBF is well-suited for a wide range of power electronics applications.

IRFH5015TRPBF Features

  • High Power Dissipation: Capable of handling up to 3.6W at ambient temperature (Ta) and 156W at case temperature (Tc), making it ideal for high-power applications.
  • Low On-Resistance: With an Rds(on) of 31mΩ at 34A and 10V Vgs, the IRFH5015TRPBF minimizes power losses and improves efficiency.
  • Robust Gate Drive: A maximum gate-source voltage (Vgs) of ±20V ensures reliable operation in various gate drive conditions.
  • Low Gate Charge: The maximum gate charge (Qg) of 50nC at 10V Vgs reduces switching losses and improves efficiency.
  • Surface Mount Package: The 8-pin PQFN package enables easy integration into surface-mount applications, providing a compact solution for space-constrained designs.
  • Compliance: The IRFH5015TRPBF is REACH unaffected, RoHS3 compliant, and has an MSL of 1, making it suitable for use in environmentally conscious applications.

IRFH5015TRPBF Applications

The IRFH5015TRPBF is ideal for applications that demand high power handling, low on-resistance, and efficient switching. Some specific use cases include:

  • Power Supplies: Ideal for high-efficiency power conversion in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Control: The low on-resistance and high current capability make it suitable for electric motor drives and industrial automation systems.
  • Renewable Energy: The IRFH5015TRPBF can be used in solar inverters and wind power converters, where high efficiency and power handling are critical.
  • Automotive: This MOSFET can be employed in electric vehicle (EV) charging systems, battery management systems, and other high-power automotive applications.

Conclusion of IRFH5015TRPBF

The IRFH5015TRPBF from Infineon Technologies is a versatile and high-performance N-Channel MOSFET that offers a combination of high power dissipation, low on-resistance, and efficient switching. Its unique features, such as the HEXFET® series configuration and robust gate drive, make it an excellent choice for a wide range of power electronics applications, including power supplies, motor control, renewable energy systems, and automotive electronics. With its compliance with REACH and RoHS3 standards, the IRFH5015TRPBF is also an environmentally friendly option for designers looking to create sustainable solutions.

FAQ

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The standard lead time for IRFH5015TRPBF is 12 Weeks.
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