Infineon Technologies_IRFH5110TRPBF
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Infineon Technologies
IRFH5110TRPBF

278-IRFH5110TRPBF
PDF Datasheet
MOSFET N-CH 100V 11A/63A 8PQFN
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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
22
Input Capacitance (Ciss) (Max) @ Vds
3152 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Typical Rise Time (ns)
9.6
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
7.8
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IRFH5110TRPBF Description

IRFH5110TRPBF Description

The IRFH5110TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding power management applications. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 11A at 25°C (Ta) and 63A at Tc, this device offers robust performance in a compact 8-pin PQFN package. The IRFH5110TRPBF is part of the HEXFET® series, known for its superior ruggedness and reliability.

IRFH5110TRPBF Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and high efficiency.
  • Gate Charge (Qg): 72 nC @ 10V - Minimizes switching losses for improved efficiency.
  • Input Capacitance (Ciss): 3152 pF @ 25V - Reduces input charging current and improves switching speed.
  • Rds On (Max): 12.4mOhm @ 37A, 10V - Low on-resistance for minimal power dissipation.
  • Vgs(th) (Max): 4V @ 100µA - Ensures reliable turn-on and stable operation.
  • Power Dissipation: 3.6W (Ta), 114W (Tc) - High power handling capability for demanding applications.
  • Mounting Type: Surface Mount - Ideal for space-constrained designs.
  • RoHS Compliance: ROHS3 Compliant - Ensures environmental friendliness.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for a wide range of manufacturing processes.

IRFH5110TRPBF Applications

The IRFH5110TRPBF is ideal for applications requiring high power handling and robust performance in a compact form factor. Some specific use cases include:

  1. Power Supplies: High-efficiency power conversion in switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
  2. Motor Drives: Reliable control of brushed and brushless DC motors in industrial and automotive applications.
  3. Telecommunications: Power management in base stations and other telecom infrastructure equipment.
  4. Renewable Energy: Efficient power conversion in solar inverters and wind power systems.

Conclusion of IRFH5110TRPBF

The IRFH5110TRPBF is a versatile and powerful N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and excellent switching performance. Its compact 8-pin PQFN package and surface-mount design make it suitable for a wide range of power management applications, from power supplies to motor drives. While the IRFH5110TRPBF is now considered obsolete, its unique features and advantages make it a valuable choice for existing designs and applications that require its specific performance characteristics.

FAQ

What is IRFH5110TRPBF?
IRFH5110TRPBF is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
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What voltage specification is listed for IRFH5110TRPBF?
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