Infineon Technologies_IRFH5210TRPBF
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Infineon Technologies
IRFH5210TRPBF

278-IRFH5210TRPBF
PDF Datasheet
MOSFET N-CH 100V 10A/55A 8PQFN
12 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
21
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
2570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Typical Rise Time (ns)
9.7
PPAP
No
Channel Mode
Enhancement
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IRFH5210TRPBF Description

IRFH5210TRPBF Description

The IRFH5210TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and reliability. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 10A at 25°C, this device offers robust performance in various power management applications. It features a low on-resistance (Rds On) of 14.9mOhm at 33A and 10V, ensuring minimal power loss and high efficiency. The IRFH5210TRPBF is available in an 8-pin PQFN package, making it suitable for surface-mount applications.

IRFH5210TRPBF Features

  • 100V drain-to-source voltage (Vdss) for high-voltage applications
  • 10A continuous drain current (Id) at 25°C and 55A at Tc, providing high current handling capabilities
  • Low on-resistance (Rds On) of 14.9mOhm at 33A and 10V for high efficiency
  • ±20V gate-to-source voltage (Vgs) for wide input voltage range
  • 4V threshold voltage (Vgs(th)) at 100µA for reliable switching
  • 2570 pF input capacitance (Ciss) at 25V for fast charging and discharging
  • 59 nC gate charge (Qg) at 10V for low power consumption during switching
  • 3.6W power dissipation (Ta) and 104W (Tc) for high thermal performance
  • REACH unaffected and RoHS3 compliant for environmental compliance
  • Moisture Sensitivity Level (MSL) 1 for unlimited storage time
  • Surface-mount packaging for easy integration into PCB designs

IRFH5210TRPBF Applications

The IRFH5210TRPBF is ideal for various applications where high efficiency, reliability, and performance are critical. Some specific use cases include:

  1. Power management and conversion circuits, such as DC-DC converters and power supplies
  2. Motor control and drive applications, including industrial and automotive motor drivers
  3. Renewable energy systems, like solar inverters and wind power converters
  4. Battery management systems for electric vehicles and energy storage systems
  5. High-efficiency lighting systems, including LED drivers and ballast replacement

Conclusion of IRFH5210TRPBF

The IRFH5210TRPBF is a versatile and high-performance N-Channel MOSFET from Infineon Technologies, offering a combination of high voltage, current handling capabilities, and low on-resistance. Its unique features, such as low gate charge, fast switching, and high thermal performance, make it an excellent choice for demanding power management and motor control applications. With its compliance to environmental regulations and surface-mount packaging, the IRFH5210TRPBF is a reliable and efficient solution for various high-power electronic systems.

FAQ

What is the standard lead time for IRFH5210TRPBF?
The standard lead time for IRFH5210TRPBF is 12 Weeks.
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