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IRFH5302TRPBF
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IRFH5302TRPBF Description
IRFH5302TRPBF Description
The IRFH5302TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies. This device is designed for applications that require high efficiency and low power dissipation. With a maximum drain-to-source voltage of 30V and continuous drain current ratings of 32A at 25°C and 100A at case temperature, the IRFH5302TRPBF is well-suited for a variety of power management and motor control applications.
IRFH5302TRPBF Features
- Technology: MOSFET (Metal Oxide), leveraging Infineon's HEXFET® series for high efficiency and low on-resistance.
- Drain to Source Voltage (Vdss): 30V, suitable for low-voltage power applications.
- Current - Continuous Drain (Id): 32A at 25°C and 100A at case temperature, providing high current handling capabilities.
- Rds On (Max) @ Id, Vgs: 2.1mOhm at 50A and 10V, ensuring low conduction losses.
- Gate Charge (Qg) (Max) @ Vgs: 76 nC at 10V, contributing to fast switching speeds.
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF at 15V, minimizing capacitive effects.
- Mounting Type: Surface Mount, facilitating integration into compact designs.
- Package: PQFN (5x6) Single Die, optimizing space efficiency.
- Power Dissipation (Max): 3.6W at ambient temperature and 100W at case temperature, enabling high power applications.
- Vgs (Max): ±20V, providing flexibility in gate drive voltage.
- RoHS Status: ROHS3 Compliant, adhering to environmental regulations.
- Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating no sensitivity to moisture, which is beneficial for manufacturing and storage.
IRFH5302TRPBF Applications
The IRFH5302TRPBF is ideal for applications where high efficiency and power handling are critical. Some specific use cases include:
- Power Supplies: Due to its low on-resistance and high current capability, it is well-suited for power supply designs.
- Motor Control: Its high current and voltage ratings make it an excellent choice for motor drive circuits.
- Industrial Automation: Reliable operation in harsh environments, withstanding high power dissipation and temperature fluctuations.
- Automotive Applications: The device's robustness and compliance with environmental standards make it suitable for automotive electronics.
Conclusion of IRFH5302TRPBF
The IRFH5302TRPBF stands out for its combination of high efficiency, low on-resistance, and high power handling capabilities. Its unique features, such as low gate charge and input capacitance, contribute to fast switching and minimal power loss. This MOSFET is an excellent choice for designers looking to optimize power management and motor control systems in a variety of applications, from industrial automation to automotive electronics.



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