Infineon Technologies_IRFH5406TRPBF
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Infineon Technologies
IRFH5406TRPBF

278-IRFH5406TRPBF
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MOSFET N-CH 60V 11A/40A 8PQFN

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1256 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
8-PQFN (5x6)
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
3.6W (Ta), 46W (Tc)
Package / Case
8-PowerVDFN
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IRFH5406TRPBF Description

IRFH5406TRPBF Description

The IRFH5406TRPBF is a high-performance MOSFET N-CH 60V device from Infineon Technologies, designed for demanding applications that require high efficiency and reliability. This 8PQFN-packaged device offers a continuous drain current of 11A at 25°C ambient temperature and 40A at case temperature, making it suitable for a wide range of power electronic applications.

IRFH5406TRPBF Features

  • Technology: MOSFET (Metal Oxide) with HEXFET® series, providing superior performance and reliability.
  • Drain to Source Voltage (Vdss): 60V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id): 11A at 25°C ambient temperature and 40A at case temperature.
  • Rds On (Max): 14.4mOhm at 24A, 10V, ensuring low on-resistance and high efficiency.
  • Gate Charge (Qg): 35 nC at 10V, reducing switching losses and improving performance.
  • Input Capacitance (Ciss): 1256 pF at 25V, minimizing capacitive effects and improving stability.
  • Vgs (Max): ±20V, allowing for a wide range of gate drive voltages.
  • Vgs(th) (Max): 4V at 50µA, ensuring reliable turn-on and low threshold voltage.
  • Power Dissipation: 3.6W at ambient temperature and 46W at case temperature, enabling high power applications.
  • Mounting Type: Surface Mount, suitable for modern electronics manufacturing processes.
  • RoHS Status: ROHS3 Compliant, ensuring environmental compliance and sustainability.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), allowing for flexible storage and handling conditions.

IRFH5406TRPBF Applications

The IRFH5406TRPBF is ideal for a variety of high-power applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, it is suitable for power supply designs that require high efficiency and reliability.
  2. Motor Control: The device's low on-resistance and high current capabilities make it ideal for motor control applications, such as electric vehicles and industrial motor drives.
  3. Industrial Automation: Its robustness and high-power dissipation capabilities make it suitable for industrial automation systems that require high reliability and performance.
  4. Renewable Energy: The IRFH5406TRPBF can be used in renewable energy systems, such as solar inverters and wind power converters, where high efficiency and reliability are critical.

Conclusion of IRFH5406TRPBF

The IRFH5406TRPBF is a high-performance MOSFET from Infineon Technologies, offering a combination of high voltage, current, and power dissipation capabilities. Its unique features, such as low on-resistance, low gate charge, and high input capacitance, make it an ideal choice for demanding power electronic applications. Despite being classified as obsolete, its superior performance and reliability make it a valuable option for applications where high efficiency and robustness are critical.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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