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IRFH6200TRPBF

IRFH6200TRPBF Description

The IRFH6200TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications that require high efficiency and reliability. This MOSFET features a drain-to-source voltage (Vdss) of 20V, a continuous drain current (Id) of 49A at 25°C and 100A at case temperature (Tc), and a maximum power dissipation of 3.6W at ambient temperature (Ta) and 156W at case temperature (Tc). With its low on-resistance (Rds On) of 0.95mOhm at 50A and 10V, the IRFH6200TRPBF offers excellent efficiency and performance.

IRFH6200TRPBF Features

• Technology: MOSFET (Metal Oxide), leveraging Infineon's HEXFET® series for superior performance.
• Input Capacitance (Ciss): 10890 pF at 10V, ensuring fast switching and minimal distortion.
• Gate Charge (Qg): 230 nC at 4.5V, reducing switching losses and improving efficiency.
• Gate Voltage (Vgs): ±12V, providing flexibility in gate drive requirements.
• Thermal Performance: Moisture Sensitivity Level (MSL) of 1, allowing for unlimited storage time before reflow soldering.
• Compliance: RoHS3 compliant, REACH unaffected, and EAR99 classification, ensuring environmental and regulatory compliance.
• Package: 8-pin PQFN, suitable for surface mount applications, and available in tape & reel packaging for automated assembly.

IRFH6200TRPBF Applications

The IRFH6200TRPBF is ideal for applications that demand high efficiency, low power loss, and robust performance. Some specific use cases include:

• Power Supplies: In switch-mode power supplies (SMPS) and power factor correction (PFC) circuits, where high efficiency and low power loss are critical.
• Industrial Automation: For motor control and drives, where high current and voltage ratings are necessary.
• Automotive Applications: In electric vehicle (EV) charging systems and battery management, where reliability and performance are paramount.
• Telecommunications: In power amplifiers and signal processing circuits, where fast switching and low distortion are required.

Conclusion of IRFH6200TRPBF

The IRFH6200TRPBF from Infineon Technologies is a powerful and versatile N-Channel MOSFET, offering a combination of high efficiency, low power loss, and robust performance. Its unique features, such as low on-resistance, high input capacitance, and excellent thermal performance, make it an ideal choice for a wide range of applications in power electronics, industrial automation, automotive, and telecommunications. With its compliance to environmental and regulatory standards, the IRFH6200TRPBF is a reliable and eco-friendly solution for demanding applications.