Infineon Technologies_IRFH8201TRPBF
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Infineon Technologies
IRFH8201TRPBF

278-IRFH8201TRPBF
PDF Datasheet
MOSFET N-CH 25V 49A/100A 8PQFN
12 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
31
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
7330 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
Typical Rise Time (ns)
54
PPAP
No
Channel Mode
Enhancement
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IRFH8201TRPBF Description

IRFH8201TRPBF Description

The IRFH8201TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for a wide range of applications. It is part of the HEXFET® and StrongIRFET™ series, known for their excellent performance and reliability. This MOSFET operates at a drain-to-source voltage (Vdss) of 25V and can handle continuous drain currents of 49A at 25°C (Ta) and 100A at Tc. The device is available in an 8-pin PQFN package and is surface mountable.

IRFH8201TRPBF Features

  • Low Rds(on): The IRFH8201TRPBF boasts a low maximum Rds(on) of 0.95mOhm at 50A and 10V, ensuring efficient power dissipation and reduced power loss in the application.
  • High Gate Charge (Qg): With a maximum gate charge (Qg) of 111 nC at 10V, this MOSFET provides fast switching capabilities, reducing switching losses and improving overall efficiency.
  • Robust Input Capacitance (Ciss): The device has a maximum input capacitance (Ciss) of 7330 pF at 13V, ensuring stable operation under varying input conditions.
  • Wide Vgs Range: The IRFH8201TRPBF can operate with a gate-to-source voltage (Vgs) ranging from -20V to +20V, providing flexibility in circuit design.
  • Compliance with Industry Standards: The device is compliant with the RoHS3 standard, making it suitable for environmentally friendly applications. It is also REACH unaffected and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time.

IRFH8201TRPBF Applications

The IRFH8201TRPBF is ideal for applications that require high efficiency, fast switching, and robust performance. Some specific use cases include:

  1. Power Supplies: Due to its low Rds(on) and high drain current capabilities, this MOSFET is suitable for power supply designs, where efficiency and power handling are critical.
  2. Motor Controls: The IRFH8201TRPBF can be used in motor control applications, where high currents and fast switching are required for precise motor control.
  3. Industrial Automation: In industrial automation systems, this MOSFET can be used for driving high-power loads and providing efficient power management.

Conclusion of IRFH8201TRPBF

The IRFH8201TRPBF is a versatile and high-performance N-Channel MOSFET from Infineon Technologies. Its unique combination of low Rds(on), high gate charge, and compliance with industry standards make it an excellent choice for a wide range of applications, including power supplies, motor controls, and industrial automation. With its robust performance and reliability, the IRFH8201TRPBF is a valuable addition to any electronics engineer's toolkit.

FAQ

What voltage specification is listed for IRFH8201TRPBF?
The listed voltage-related specification for IRFH8201TRPBF is 25 V.
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