Infineon Technologies_IRFH8202TRPBF
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Infineon Technologies
IRFH8202TRPBF

278-IRFH8202TRPBF
PDF Datasheet
MOSFET N-CH 25V 47A/100A 8PQFN

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
30
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
7174 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Typical Rise Time (ns)
46
PPAP
No
Channel Mode
Enhancement
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IRFH8202TRPBF Description

IRFH8202TRPBF Description

The IRFH8202TRPBF is a high-performance N-Channel MOSFET designed by Infineon Technologies. It features a drain-source voltage (Vdss) of 25V and is capable of handling continuous drain currents of 47A at 25°C and 100A at case temperature (Tc). With a maximum power dissipation of 3.6W at ambient temperature (Ta) and 160W at case temperature (Tc), this device is well-suited for high-power applications. The IRFH8202TRPBF is available in an 8-pin PQFN package and is surface-mount compatible.

IRFH8202TRPBF Features

  • Technology: MOSFET (Metal Oxide) - Utilizing advanced MOSFET technology for high efficiency and performance.
  • Series: HEXFET®, StrongIRFET™ - Part of Infineon's renowned series of high-power MOSFETs.
  • Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V - Offers low on-resistance for minimal power loss.
  • Vgs(th) (Max) @ Id: 2.35V @ 150µA - Provides a low threshold voltage for efficient operation.
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V - Minimizes switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V - Ensures fast switching speeds.
  • Vgs (Max): ±20V - Allows for a wide range of gate voltages.
  • RoHS Status: ROHS3 Compliant - Meets environmental regulations for safe disposal.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for a wide range of manufacturing environments.
  • REACH Status: REACH Unaffected - Compliant with European Union regulations on chemicals.

IRFH8202TRPBF Applications

The IRFH8202TRPBF is ideal for a variety of high-power applications, including:

  1. Power Supplies: Due to its high drain-source voltage and continuous drain current capabilities, this MOSFET is well-suited for power supply designs.
  2. Motor Controls: The device's low on-resistance and high current handling make it an excellent choice for motor control applications.
  3. Industrial Automation: Its robust performance and high power dissipation capabilities make it suitable for industrial automation systems.
  4. Automotive Electronics: The IRFH8202TRPBF can be used in automotive applications where high power and reliability are critical.

Conclusion of IRFH8202TRPBF

The IRFH8202TRPBF is a high-performance N-Channel MOSFET from Infineon Technologies, offering a combination of high power handling, low on-resistance, and fast switching speeds. Its advanced features and compliance with environmental regulations make it an excellent choice for a wide range of high-power applications, including power supplies, motor controls, industrial automation, and automotive electronics. Despite being marked as obsolete, this device remains a reliable option for applications that require its specific performance characteristics.

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