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IRFI1010NPBF

IRFI1010NPBF Description

The IRFI1010NPBF from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 55V drain-to-source voltage (Vdss) and 49A continuous drain current (Id), it delivers robust performance in power management circuits. The device features a low on-resistance (Rds(on)) of 12mΩ at 10V gate drive, ensuring minimal conduction losses. Its 2900pF input capacitance (Ciss) and 130nC total gate charge (Qg) enable fast switching, making it suitable for high-frequency applications. Packaged in a TO-220AB FP through-hole format, it offers reliable thermal dissipation with a 58W power rating (Tc).

IRFI1010NPBF Features

• Low Rds(on): 12mΩ @ 26A, 10V reduces power loss and improves efficiency.
• High Current Handling: 49A continuous drain current supports high-power applications.
• Fast Switching: Optimized gate charge (130nC) and capacitance for rapid transitions.
• Robust Construction: TO-220AB FP package ensures effective heat dissipation.
• Wide Voltage Range: ±20V gate-source voltage (Vgs) tolerance enhances flexibility.
• Compliance: ROHS3 compliant and REACH unaffected, meeting environmental standards.

IRFI1010NPBF Applications

This MOSFET is ideal for:

• DC-DC Converters: Efficient power conversion in industrial and automotive systems.
• Motor Drives: High-current switching in brushed/brushless motor controllers.
• Power Supplies: Used in SMPS designs for low-loss switching.
• Battery Management: Protection circuits and load switches in energy storage systems.
• Inverters: Solar and UPS applications requiring reliable high-voltage switching.

Conclusion of IRFI1010NPBF

The IRFI1010NPBF combines high current capability, low conduction resistance, and fast switching, making it a versatile choice for power electronics. While marked obsolete, its performance remains competitive for legacy designs. Engineers benefit from its HEXFET® technology, thermal efficiency, and compliance with industry standards, ensuring reliability in demanding applications.