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IRFI4110GPBF

IRFI4110GPBF Description

The IRFI4110GPBF from Infineon Technologies is a 100V N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a continuous drain current (Id) of 72A (at Tc=25°C) and an ultra-low on-resistance (Rds(on)) of 4.5mΩ at 10V gate drive, this device minimizes conduction losses, making it ideal for power management in demanding environments. Packaged in a TO-220AB FP (FullPAK) through-hole mount, it offers robust thermal performance with a maximum power dissipation of 61W (Tc).

IRFI4110GPBF Features

• High Current Handling: Supports 72A continuous drain current with a 100V drain-source voltage (Vdss), suitable for high-power applications.
• Low Rds(on): 4.5mΩ @ 10V Vgs ensures minimal power loss and improved efficiency.
• Fast Switching: Gate charge (Qg) of 290nC @ 10V and input capacitance (Ciss) of 9540pF @ 50V enable rapid switching performance.
• Robust Construction: TO-220AB FP package enhances heat dissipation, while ±20V maximum gate-source voltage (Vgs) provides flexibility in drive circuitry.
• Compliance: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for reliability in storage and assembly.

IRFI4110GPBF Applications

• Power Supplies: High-efficiency DC-DC converters, SMPS, and voltage regulators.
• Motor Control: Ideal for H-bridge inverters and brushed/brushless motor drivers.
• Automotive Systems: Suitable for load switches, battery management, and LED drivers.
• Industrial Equipment: Used in welding machines, UPS systems, and high-current switching modules.

Conclusion of IRFI4110GPBF

The IRFI4110GPBF excels in high-current, high-voltage applications with its low Rds(on), high power dissipation, and rugged TO-220AB FP package. While marked as "Not For New Designs", its proven performance in power electronics makes it a reliable choice for legacy systems or replacements. Its balance of efficiency, thermal management, and switching speed positions it as a strong contender for industrial, automotive, and power supply designs.