Infineon Technologies_IRFI4229PBF
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Infineon Technologies
IRFI4229PBF

278-IRFI4229PBF
PDF Datasheet
MOSFET N-CH 250V 19A TO220AB
98 weeks

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Tech Specifications

Configuration
Single
Input Capacitance (Ciss) (Max) @ Vds
4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Typical Rise Time (ns)
17
PPAP
No
Channel Mode
Enhancement
Product Status
Obsolete
Automotive
No
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IRFI4229PBF Description

IRFI4229PBF Description

The IRFI4229PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for a wide range of applications requiring high efficiency and reliability. This device is part of the HEXFET® series and offers several unique features that set it apart from similar models. With a maximum drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 19A at 25°C, the IRFI4229PBF is capable of handling demanding power requirements.

IRFI4229PBF Features

  • Technology: MOSFET (Metal Oxide) - This technology offers high efficiency, fast switching speeds, and low power consumption.
  • Max Power Dissipation: 46W (Tc) - The IRFI4229PBF can dissipate a significant amount of power, making it suitable for high-power applications.
  • Max Vgs: ±30V - This wide voltage range allows for greater flexibility in circuit design.
  • Rds On (Max): 46mOhm @ 11A, 10V - Low on-resistance ensures minimal power loss and high efficiency.
  • Gate Charge (Qg) (Max): 110 nC @ 10V - Low gate charge reduces switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max): 4480 pF @ 25 V - Low input capacitance contributes to faster switching speeds.
  • Mounting Type: Through Hole - This mounting type provides robust mechanical support and thermal dissipation.
  • Package: Tube - The tube packaging offers protection and ease of handling during assembly.
  • RoHS Status: ROHS3 Compliant - The IRFI4229PBF meets environmental regulations, making it suitable for green electronics.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - This level indicates that the device is not sensitive to moisture, allowing for flexible storage and handling.

IRFI4229PBF Applications

The IRFI4229PBF is ideal for applications that require high efficiency, reliability, and power handling capabilities. Some specific use cases include:

  1. Power Supplies: Due to its high power dissipation and low on-resistance, the IRFI4229PBF is well-suited for power supply applications, such as switching power supplies and battery chargers.
  2. Motor Controls: The device's high current handling capability makes it an excellent choice for motor control applications, including industrial motor drives and HVAC systems.
  3. Automotive Electronics: The IRFI4229PBF can be used in various automotive applications, such as electric power steering and electric vehicle charging systems, thanks to its robustness and compliance with environmental regulations.

Conclusion of IRFI4229PBF

The IRFI4229PBF is a high-performance N-Channel MOSFET from Infineon Technologies, offering a combination of high power handling, low on-resistance, and fast switching speeds. Its unique features, such as low gate charge and input capacitance, contribute to improved efficiency and performance. While the IRFI4229PBF is now considered obsolete, it remains a reliable choice for applications requiring high efficiency and power handling capabilities, such as power supplies, motor controls, and automotive electronics.

FAQ

What is IRFI4229PBF?
IRFI4229PBF is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is IRFI4229PBF currently in stock?
What operating temperature range does IRFI4229PBF support?
What voltage specification is listed for IRFI4229PBF?
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