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IRFIZ34NPBF

IRFIZ34NPBF Description

The IRFIZ34NPBF from Infineon Technologies is an N-channel HEXFET® MOSFET designed for high-efficiency power switching applications. With a 55V drain-to-source voltage (Vdss) and 21A continuous drain current (Id), it delivers robust performance in demanding environments. This obsolete (but still relevant) through-hole (TO-220AB FP) device features a low on-resistance (Rds(on)) of 40mOhm at 10V gate drive, minimizing conduction losses. Its 700pF input capacitance (Ciss) and 34nC total gate charge (Qg) ensure fast switching, making it suitable for high-frequency applications. The MOSFET is RoHS3 compliant and REACH unaffected, adhering to environmental standards.

IRFIZ34NPBF Features

• Low Rds(on): 40mOhm @ 11A, 10V for reduced power dissipation.
• High Current Handling: 21A continuous drain current (Tc) for power-intensive tasks.
• Fast Switching: Optimized gate charge (34nC) and input capacitance (700pF) for efficient high-frequency operation.
• Robust Voltage Ratings: 55V Vdss and ±20V Vgs(max) for reliable operation in varied conditions.
• Thermal Efficiency: 37W max power dissipation (Tc) ensures stable thermal performance.
• Industry-Standard Package: TO-220AB FP for easy mounting and heat dissipation.

IRFIZ34NPBF Applications

• Power Supplies: Efficient DC-DC converters and SMPS designs.
• Motor Control: Suitable for H-bridge and PWM-driven motor drivers.
• Automotive Systems: Auxiliary power switching in 12V/24V systems.
• Industrial Load Switching: Reliable performance in relays and solenoids.
• Audio Amplifiers: Low-distortion switching for Class-D audio applications.

Conclusion of IRFIZ34NPBF

The IRFIZ34NPBF offers a balance of low conduction losses, fast switching, and high current capability, making it ideal for power management in industrial, automotive, and consumer electronics. While marked obsolete, its HEXFET® technology ensures compatibility with legacy designs requiring robust through-hole MOSFETs. Engineers seeking a cost-effective, high-performance solution for medium-power applications will find this MOSFET a dependable choice.