Infineon Technologies Tariff Inquiry

IRFP3703PBF

IRFP3703PBF Description

The IRFP3703PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding power electronics applications. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 210A at 25°C, this MOSFET is well-suited for high-power applications. The device features a low on-resistance (Rds On) of 2.8mOhm at 76A and 10V, ensuring efficient power dissipation. The IRFP3703PBF is packaged in a through-hole TO247AC package, making it suitable for a wide range of applications.

IRFP3703PBF Features

• N-Channel MOSFET with 30V drain-to-source voltage (Vdss)
• Continuous drain current (Id) of 210A at 25°C
• Low on-resistance (Rds On) of 2.8mOhm at 76A and 10V
• High gate charge (Qg) of 209nC at 10V, ensuring fast switching speeds
• Low input capacitance (Ciss) of 8250pF at 25V, reducing power losses
• Drive voltage (Vgs) range of ±20V, providing flexibility in circuit design
• RoHS3 compliant, ensuring environmental sustainability
• REACH unaffected, adhering to strict European chemical regulations
• Moisture sensitivity level (MSL) of 1, allowing for unlimited storage time

IRFP3703PBF Applications

The IRFP3703PBF is ideal for a variety of high-power applications, including:

1. Motor control and drives
2. Power supplies and converters
3. Automotive electronics
4. Industrial control systems
5. Renewable energy systems, such as solar inverters and wind turbines

Conclusion of IRFP3703PBF

The IRFP3703PBF from Infineon Technologies is a powerful and efficient N-Channel MOSFET, offering excellent performance in high-power applications. Its low on-resistance, high gate charge, and low input capacitance make it an ideal choice for demanding power electronics applications. With its RoHS3 compliance and REACH unaffected status, the IRFP3703PBF is also environmentally friendly, making it a responsible choice for manufacturers.