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IRFP4137PBF

IRFP4137PBF Description

The IRFP4137PBF is a high-performance N-Channel MOSFET designed and manufactured by Infineon Technologies. This device is part of the HEXFET® series and is packaged in a TO247AC case, suitable for through-hole mounting. With a drain-to-source voltage (Vdss) of 300V and a continuous drain current (Id) of 38A at 25°C, the IRFP4137PBF is well-suited for applications requiring high voltage and current handling capabilities.

IRFP4137PBF Features

• High Voltage and Current Ratings: The IRFP4137PBF boasts a drain-to-source voltage (Vdss) of 300V and can handle continuous drain currents (Id) of up to 38A at 25°C.
• Low On-Resistance: The maximum on-resistance (Rds On) is 69mΩ at 24A and 10V, ensuring efficient power dissipation and minimal power loss.
• Low Gate Charge: With a maximum gate charge (Qg) of 125nC at 10V, the IRFP4137PBF offers fast switching capabilities and reduced power consumption.
• Robust Thermal Performance: The device can dissipate up to 341W of power at the maximum junction temperature (Tc), making it suitable for high-power applications.
• Environmental Compliance: The IRFP4137PBF is compliant with the RoHS3 directive and is unaffected by REACH regulations, ensuring environmentally friendly operation.
• Moisture Sensitivity Level (MSL) 1: The device has an unlimited shelf life, making it suitable for long-term storage without concerns about moisture sensitivity.

IRFP4137PBF Applications

The IRFP4137PBF is ideal for a variety of high-power applications, including:

• Power Supplies: Due to its high voltage and current ratings, the IRFP4137PBF is well-suited for use in power supply designs, such as switching power supplies and voltage regulators.
• Industrial Automation: The device's robust thermal performance and low on-resistance make it an excellent choice for motor drives and other industrial automation applications.
• Automotive Electronics: The IRFP4137PBF can be used in various automotive applications, such as electric vehicle chargers and power management systems.
• Telecommunications: The device's fast switching capabilities and low gate charge make it suitable for use in telecommunications equipment, such as power amplifiers and signal processing circuits.

Conclusion of IRFP4137PBF

The IRFP4137PBF is a versatile and high-performance N-Channel MOSFET from Infineon Technologies. Its combination of high voltage and current ratings, low on-resistance, and robust thermal performance make it an excellent choice for a wide range of high-power applications. While it is not recommended for new designs, the IRFP4137PBF remains a reliable option for existing applications that require its specific performance characteristics.