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IRFP4410ZPBF

IRFP4410ZPBF Description

The IRFP4410ZPBF is an N-channel power MOSFET from Infineon Technologies' HEXFET® series, designed for high-efficiency switching applications. With a 100V drain-to-source voltage (Vdss) and 97A continuous drain current (Id), it delivers robust performance in power management circuits. The device features a low on-resistance (Rds(on)) of 9mΩ at 10V gate drive, minimizing conduction losses. Packaged in a TO-247AC through-hole format, it supports high-power dissipation up to 230W (Tc), making it suitable for demanding environments.

IRFP4410ZPBF Features

• High Current Handling: 97A continuous drain current ensures reliable operation in high-power circuits.
• Low Rds(on): 9mΩ @ 10V reduces power losses and improves efficiency.
• Fast Switching: Gate charge (Qg) of 120nC @ 10V and input capacitance (Ciss) of 4820pF @ 50V enable rapid switching transitions.
• Robust Construction: ±20V gate-source voltage (Vgs) tolerance enhances durability in voltage-spike-prone applications.
• Compliance: ROHS3 and REACH compliant, with an ECCN EAR99 classification for broad market accessibility.

IRFP4410ZPBF Applications

• Switching Power Supplies: Ideal for high-efficiency DC-DC converters and SMPS designs.
• Motor Drives: Suitable for industrial motor control due to high current and voltage ratings.
• Inverters & UPS Systems: Ensures reliable performance in energy conversion applications.
• Automotive Systems: Used in high-power automotive electronics, though designers should note its obsolete status and seek alternatives for new designs.

Conclusion of IRFP4410ZPBF

The IRFP4410ZPBF is a high-performance MOSFET offering low conduction losses, high current capability, and robust thermal management, making it a strong choice for power electronics. While now obsolete, its legacy performance in industrial, automotive, and power supply applications remains notable. Engineers should verify replacement options from Infineon’s latest HEXFET® lineup for modern designs.

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